MT29F256G08EBCAGJ4-5M:A TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 245 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 0000.00.0000 |
Overview of MT29F256G08EBCAGJ4-5M:A TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08EBCAGJ4-5M:A TR is a 256 Gbit non-volatile NAND flash memory device using TLC technology. It is organized as 32G x 8 with a parallel memory interface and is supplied in a 132-VBGA (12×18) package.
Designed for systems that require high-density non-volatile storage, this device supports a 200 MHz clock frequency and operates from a 2.7 V to 3.6 V supply within an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Core 256 Gbit capacity organized as 32G × 8, implemented with FLASH - NAND (TLC) technology.
- Interface & Performance Parallel memory interface with support for a 200 MHz clock frequency for system integration.
- Power Operates from a 2.7 V to 3.6 V supply range.
- Package 132-VBGA package, supplier device package listed as 132-VBGA (12×18).
- Operating Conditions Specified ambient operating temperature range of 0°C to 70°C.
- Memory Format Non-volatile FLASH memory for persistent data and firmware retention.
Typical Applications
- Embedded Systems — Provides non-volatile storage for system firmware and retained data in embedded designs requiring high capacity.
- Data Storage Modules — Used where large NAND flash capacity is needed in a parallel interface form factor.
- Firmware/Image Storage — Suitable for storing firmware images and large read-only data sets that require persistent storage.
Unique Advantages
- High-density storage: 256 Gbit capacity delivers substantial non-volatile storage in a single device.
- TLC NAND technology: Provides multi-level cell storage characteristics consistent with large-capacity flash deployments.
- Parallel interface support: Parallel memory interface enables straightforward integration with systems designed for parallel flash.
- Standard voltage operation: 2.7 V to 3.6 V supply makes the device compatible with common system power rails.
- Industry-standard package: 132-VBGA (12×18) package offers a defined footprint for board-level implementation.
- Specified operating range: Rated for 0°C to 70°C ambient operation for temperature-bound system deployments.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08EBCAGJ4-5M:A TR positions itself as a high-capacity, parallel-interface NAND flash solution that combines 256 Gbit density with TLC technology and a defined 132‑VBGA package footprint. Its electrical and timing specifications—2.7 V to 3.6 V supply and 200 MHz clock—make it suitable for designs that require substantial non-volatile storage within those operating and power envelopes.
This device is appropriate for engineers and designers building systems that need persistent storage for firmware, large data sets, or system-level non-volatile memory while conforming to the listed package and temperature constraints.
If you would like pricing or lead-time information for MT29F256G08EBCAGJ4-5M:A TR, request a quote or contact sales to submit your requirements and receive a formal quotation.
