MT29F256G08EBHAFJ4-3RES:A TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 882 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08EBHAFJ4-3RES:A TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08EBHAFJ4-3RES:A TR is a 256 Gbit non-volatile NAND flash memory device using TLC technology. It is organized as 32G × 8 and presents a parallel memory interface with a clock frequency of 333 MHz.
This device is intended for systems that require parallel NAND flash storage, offering a defined voltage supply range and a compact 132‑VBGA (12 × 18) package for board-level integration.
Key Features
- Memory Technology Triple-level cell (TLC) NAND flash providing non-volatile storage in a 256 Gbit capacity.
- Memory Organization & Format Organized as 32G × 8 in FLASH format for parallel-access memory architectures.
- Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz.
- Voltage Supply Operates from 2.5 V to 3.6 V, supporting systems within this supply range.
- Package 132‑VBGA package (12 × 18 mm) for surface-mount integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
Typical Applications
- Parallel Flash Storage Use where 256 Gbit parallel NAND flash is required for system storage or file system media.
- Embedded Memory Integration into embedded designs that use a parallel memory interface and require non-volatile FLASH.
- Firmware and Data Storage Suitable for storing firmware images or bulk data in systems that operate within the specified voltage and temperature ranges.
Unique Advantages
- Large 256 Gbit Capacity: Provides substantial non-volatile storage in a single device, organized as 32G × 8.
- Parallel Interface with Defined Clock: Parallel memory access with a 333 MHz clock frequency specification for predictable timing integration.
- Flexible Voltage Range: Operates across 2.5 V to 3.6 V, accommodating a range of system power domains.
- Compact VBGA Package: 132‑VBGA (12 × 18) footprint for high-density board layouts and surface-mount assembly.
- Specified Commercial Temperature Range: Rated for 0°C to 70°C (TA), matching many commercial and general-purpose designs.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08EBHAFJ4-3RES:A TR offers a clearly defined set of characteristics—256 Gbit TLC NAND flash, parallel interface at 333 MHz, 2.5 V–3.6 V operation, and a 132‑VBGA package—that make it suitable for designs requiring straightforward parallel non-volatile storage. Its organization and electrical specifications simplify integration into systems that accept parallel FLASH devices.
Choose this device when your design requires a high-capacity parallel FLASH memory with explicit package and operating specifications, enabling predictable board-level integration and planning for thermal and power budgets.
If you need pricing, availability, or a formal quote for the MT29F256G08EBHAFJ4-3RES:A TR, request a quote or contact sales to discuss your requirements and lead times.
