MT29F256G08EBHAFJ4-3R:A TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 432 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08EBHAFJ4-3R:A TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08EBHAFJ4-3R:A TR is a 256 Gbit non-volatile flash memory device based on NAND (TLC) technology. It is organized as 32G × 8 with a parallel memory interface, designed to provide high-density storage in a compact 132-VBGA (12×18) package.
This device targets designs that require large non-volatile storage capacity with a 2.5 V to 3.6 V supply range and supports a clock frequency of up to 333 MHz. The specified ambient operating temperature range is 0°C to 70°C (TA).
Key Features
- Memory Type Non-volatile flash memory using NAND (TLC) technology for high-density data storage.
- Density & Organization 256 Gbit capacity organized as 32G × 8 to support large storage requirements.
- Interface & Performance Parallel memory interface with a clock frequency rating of 333 MHz for synchronized operation.
- Power Supply Wide supply voltage range of 2.5 V to 3.6 V to accommodate various system rails.
- Package 132-VBGA package (12×18 mm) for compact board-level integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
Unique Advantages
- High storage density: 256 Gbit capacity enables consolidation of large datasets in a single device.
- Parallel interface with defined clock rate: 333 MHz clock support simplifies timing design for parallel memory systems.
- Flexible supply range: 2.5 V–3.6 V operating voltage supports integration with multiple system power configurations.
- Compact VBGA footprint: 132-VBGA (12×18) package reduces board area for space-constrained designs.
- TLC NAND technology: Non-volatile NAND (TLC) architecture provides an efficient balance of density and cost for high-capacity storage needs.
Why Choose MT29F256G08EBHAFJ4-3R:A TR?
This MT29F256G08EBHAFJ4-3R:A TR device combines a high 256 Gbit density, parallel interface with a 333 MHz clock rating, and a compact 132-VBGA package to address designs that require substantial non-volatile storage in a small form factor. Its 2.5 V to 3.6 V supply range and defined operating temperature range support straightforward integration into systems that match these electrical and environmental conditions.
The device is well suited for engineers and procurement teams seeking high-capacity flash memory components where package density, interface type, and voltage compatibility are key selection criteria. Its specification set provides a clear basis for evaluating fit in projects requiring large onboard, parallel-access non-volatile memory.
For pricing, availability, or to request a quote for MT29F256G08EBHAFJ4-3R:A TR, submit a quote request or contact sales to get further assistance and lead-time details.
