MT29F256G08EBCAGJ4-5M:A
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 678 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F256G08EBCAGJ4-5M:A – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08EBCAGJ4-5M:A is a 256 Gbit non-volatile NAND flash memory device implemented with TLC flash technology and a parallel memory interface. It provides a 32G × 8 memory organization in a compact 132-VBGA (12×18) package and is specified for operation from 0°C to 70°C.
This device is suited for designs that require high-density, parallel NAND flash storage with a 200 MHz clock frequency and a single-supply voltage range of 2.7 V to 3.6 V.
Key Features
- Memory Core 256 Gbit capacity organized as 32G × 8 using FLASH - NAND (TLC) technology for high-density non-volatile storage.
- Interface Parallel memory interface suitable for parallel bus architectures and systems requiring parallel flash access.
- Performance Clock frequency up to 200 MHz to support required data-rate needs over the device’s parallel interface.
- Power Single-supply operation with a voltage supply range of 2.7 V to 3.6 V.
- Package 132-VBGA package (12×18) offering a compact board footprint for high-density memory integration.
- Environmental Specified operating temperature range of 0°C to 70°C (TA).
- Memory Organization 32G × 8 configuration for straightforward byte-wide system integration.
Typical Applications
- Embedded storage systems — Provides 256 Gbit non-volatile storage for embedded platforms that use parallel NAND flash memory.
- Onboard firmware and code storage — Stores firmware images and code in systems that require a parallel flash interface and high-density memory.
- High-density data storage modules — Enables compact, high-capacity storage solutions using a 132-VBGA (12×18) package footprint.
Unique Advantages
- Large integrated capacity: 256 Gbit of TLC NAND flash provides significant on-board storage without additional components.
- Parallel interface compatibility: Parallel memory interface and 32G × 8 organization simplify integration into parallel bus designs.
- Compact packaging: 132-VBGA (12×18) package delivers a small footprint for space-constrained boards.
- Flexible power range: Operates across 2.7 V to 3.6 V supply rails to match common system power domains.
- Specified operating range: Rated for 0°C to 70°C to match standard commercial temperature environments.
- TLC NAND density: TLC technology enables higher bit density within the same package size.
Why Choose MT29F256G08EBCAGJ4-5M:A?
The MT29F256G08EBCAGJ4-5M:A combines a large 256 Gbit TLC NAND array with a parallel interface and a compact 132-VBGA (12×18) package, making it suitable for designs that require high-density non-volatile storage in a small footprint. Its 32G × 8 organization and 200 MHz clock frequency support straightforward integration into parallel bus systems.
This device is appropriate for engineers and procurement teams specifying commercial-temperature, high-capacity flash memory with a 2.7 V–3.6 V supply range and standard VBGA packaging for space-constrained applications.
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