MT29F256G08EBHAFJ4-3R:A

The MT29F256G08EBHAFJ4-3R:A is a 256 Gbit non-volatile flash memory device based on NAND TLC technology. It provides high-density parallel flash storage in a compact 132-VBGA (12×18) package with a 2.5 V to 3.6 V supply range and an operating temperature range of 0°C to 70°C.

Designed for systems that require large-capacity, parallel-access non-volatile memory, this device delivers a 32G × 8 memory organization and a documented 333 MHz clock frequency for timing reference in parallel memory architectures.

Key Features

• Memory Type & Technology  Non-volatile NAND flash using TLC technology, providing 256 Gbit of storage capacity.
• Memory Organization  Organized as 32G × 8, enabling byte-wide parallel access patterns.
• Interface & Clock  Parallel memory interface with a specified clock frequency of 333 MHz for synchronous timing requirements.
• Power  Operates from a 2.5 V to 3.6 V supply, supporting common system voltage rails.
• Package  132-VBGA package (12×18 mm footprint) for compact board-level integration.
• Operating Temperature  Specified for operation from 0°C to 70°C (TA), suitable for standard commercial-temperature designs.

Typical Applications

• Embedded storage  Use as high-density non-volatile memory in systems requiring 256 Gbit of parallel flash storage.
• Consumer and industrial electronics  Integration into devices that use parallel flash packages for firmware, content, or data retention within the 0°C to 70°C operating range.
• Board-level memory expansion  Compact 132-VBGA package allows for space-efficient addition of large-capacity flash on printed circuit boards.

Unique Advantages

• High storage density: 256 Gbit capacity supports large firmware and data storage requirements without multiple devices.
• Parallel access architecture: 32G × 8 organization and parallel interface simplify integration into existing parallel memory buses.
• Flexible supply voltage: 2.5 V to 3.6 V range enables compatibility with a variety of system power domains.
• Compact BGA packaging: 132-VBGA (12×18) minimizes board area while providing a robust package for high-density memory.
• Defined operating conditions: Specified 0°C to 70°C temperature range and documented clock frequency (333 MHz) facilitate design validation.

Why Choose MT29F256G08EBHAFJ4-3R:A?

The MT29F256G08EBHAFJ4-3R:A combines a large 256 Gbit TLC NAND capacity with a parallel interface and compact 132-VBGA package to address designs that require substantial non-volatile storage in a small footprint. Its 32G × 8 organization, 333 MHz clock reference, and 2.5 V–3.6 V supply range make it suitable for system-level integration where parallel flash is preferred.

This device is suited to engineers and procurement teams specifying high-density parallel flash for commercial-temperature applications, offering a clear set of electrical and mechanical characteristics for predictable integration and validation.

Please request a quote or submit an inquiry to our sales team to discuss pricing, availability, and integration details for the MT29F256G08EBHAFJ4-3R:A.