MT29F256G08CMEDBJ5-12IT:D TR

IC FLASH 256GBIT PAR 132TBGA
Part Description

IC FLASH 256GBIT PAR 132TBGA

Quantity 857 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package132-TBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeIndustrial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT29F256G08CMEDBJ5-12IT:D TR – IC FLASH 256GBIT PAR 132TBGA

The MT29F256G08CMEDBJ5-12IT:D TR is a 256 Gbit non-volatile Flash memory device using NAND (MLC) technology organized as 32G × 8. It provides parallel memory interface operation with a specified clock frequency of 83 MHz and supports a supply voltage range of 2.7 V to 3.6 V.

Packaged in a 132-TBGA (12x18) form factor and rated for an ambient operating temperature range of −40°C to 85°C, this device targets designs that require high-density parallel NAND flash storage in a compact package.

Key Features

  • Memory Type  Non-volatile NAND Flash (MLC) for persistent data storage without power.
  • Density & Organization  256 Gbit capacity organized as 32G × 8 to support large on-board storage requirements.
  • Interface & Performance  Parallel memory interface with a clock frequency specification of 83 MHz for synchronous operation.
  • Voltage Range  Operates across a 2.7 V to 3.6 V supply range to support common system power rails.
  • Temperature Range  Specified operating ambient temperature from −40°C to 85°C for deployment across a wide environmental span.
  • Package  132-TBGA (12x18) supplier device package suitable for compact PCB integration.

Typical Applications

  • Embedded Storage  High-density non-volatile storage for embedded systems that require large firmware or data capacity.
  • Industrial Equipment  Use in industrial electronics that demand wide ambient operating temperature support and robust storage capacity.
  • Consumer Electronics  Parallel NAND flash for devices needing significant onboard non-volatile memory in a compact package.

Unique Advantages

  • High Capacity in a Compact Package: 256 Gbit density delivered in a 132-TBGA (12x18) footprint enables substantial storage without large PCB area.
  • Parallel Interface Compatibility: Parallel memory organization (32G × 8) and 83 MHz clock support integration into systems that use parallel flash architectures.
  • Flexible Power Requirements: 2.7 V to 3.6 V supply range aligns with common system rails, simplifying power design choices.
  • Wide Operating Temperature: −40°C to 85°C ambient rating supports deployment across a broad range of environmental conditions.
  • MLC NAND Technology: Multi-level cell architecture provides the stated high-density non-volatile storage capacity.

Why Choose IC FLASH 256GBIT PAR 132TBGA?

The MT29F256G08CMEDBJ5-12IT:D TR balances high-density NAND storage with practical system integration features such as a parallel interface, an 83 MHz clock specification, and a flexible 2.7 V–3.6 V supply range. Its 132-TBGA (12x18) package and −40°C to 85°C operating range make it suitable for compact designs that require robust non-volatile memory capacity.

Designed by Micron Technology Inc., this parallel NAND Flash device is appropriate for engineers and procurement teams specifying large-capacity on-board storage where package density, voltage compatibility, and temperature tolerance are key selection criteria.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F256G08CMEDBJ5-12IT:D TR.

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