MT29F256G08CMCBBH2-10:B TR

The MT29F256G08CMCBBH2-10:B TR is a 256 Gbit non-volatile NAND flash memory device organized as 32G × 8 and implemented with MLC NAND flash technology. It provides parallel interface access with a 100 MHz clock and operates from a 2.7 V to 3.6 V supply.

This device is intended for designs that require high-density parallel flash storage in a compact 100‑TBGA (12×18) package and is specified for commercial temperature operation (0°C – 70°C, TA).

Key Features

• Memory Type & Technology MLC NAND flash non-volatile memory offering 256 Gbit capacity arranged as 32G × 8.
• Interface & Performance Parallel memory interface with a 100 MHz clock frequency for parallel-access architectures.
• Voltage Operates from a 2.7 V to 3.6 V supply to match common system power rails.
• Package Compact 100‑TBGA package (12×18) suitable for space-constrained board designs.
• Operating Temperature Commercial temperature range of 0°C – 70°C (TA).

Typical Applications

• Embedded storage systems Use as high-density non-volatile storage for firmware, file systems, or large data storage in embedded designs.
• Consumer electronics Integration into compact consumer devices that require substantial NAND capacity in a small package.
• Networking and communications equipment Storage of code and configuration data where parallel NAND access and 256 Gbit capacity are required.

Unique Advantages

• High-density single-device capacity: 256 Gbit in a single package reduces the need for multiple components to achieve large storage.
• Parallel interface with 100 MHz clock: Supports legacy and parallel-NAND controller architectures with a defined clock rate.
• Byte-wide organization (32G × 8): Simplifies controller interfacing by providing an 8-bit data bus organization.
• Wide supply voltage range: 2.7 V–3.6 V compatibility eases integration with standard system power domains.
• Space-efficient package: 100‑TBGA (12×18) delivers high capacity in a compact footprint for area-constrained PCBs.
• Commercial temperature rating: Rated for 0°C – 70°C operation for typical commercial applications.

Why Choose MT29F256G08CMCBBH2-10:B TR?

The MT29F256G08CMCBBH2-10:B TR positions itself as a straightforward solution for designers needing 256 Gbit of MLC NAND flash in a compact 100‑TBGA package with parallel interface access. Its 32G × 8 organization, 100 MHz clock specification, and 2.7 V–3.6 V supply range make it appropriate for systems that rely on parallel NAND architectures and require a high single-device capacity.

Backed by Micron Technology Inc., this device is aimed at product designs where board space, power rail compatibility, and commercial-temperature operation are primary considerations, offering a clear integration path for embedded storage, consumer devices, and networking equipment.

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