MT29F256G08CMCABH2-12ITZ:A TR
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 598 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F256G08CMCABH2-12ITZ:A TR – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCABH2-12ITZ:A TR is a 256 Gbit non-volatile NAND flash memory device built on MLC (multi-level cell) technology. It is organized as 32G × 8 and provides a parallel memory interface in a 100‑TBGA (12 × 18) package.
Designed for high-density storage requirements, this device offers a defined operating range (−40°C to 85°C) and a supply voltage window of 2.7 V to 3.6 V, with an 83 MHz clock frequency for parallel access operations.
Key Features
- Memory Core MLC NAND flash technology providing 256 Gbit of non-volatile storage organized as 32G × 8.
- Interface & Timing Parallel memory interface with a specified clock frequency of 83 MHz for synchronous parallel access.
- Voltage Operates from 2.7 V to 3.6 V, supporting a common supply range for system integration.
- Thermal Range Rated for operation from −40°C to 85°C (TA), enabling use across a wide ambient temperature span.
- Package Supplied in a 100‑TBGA package (12 × 18), offering a compact, ball‑grid array form factor for board-level placement.
- Memory Format FLASH memory format optimized for non-volatile data storage.
Typical Applications
- High-density non-volatile storage — For designs that require large-capacity NAND flash in a compact package.
- Parallel-interface memory systems — Where parallel access and an 83 MHz clock are required for data transfer.
- Temperature-challenged environments — Suitable for systems operating within −40°C to 85°C and using a 2.7 V to 3.6 V supply.
Unique Advantages
- High storage density: 256 Gbit capacity in a single device supports large data storage without multiple components.
- Byte-oriented organization: 32G × 8 memory organization enables byte-wide access patterns for straightforward system integration.
- Compact BGA package: 100‑TBGA (12 × 18) reduces board footprint while providing robust soldered connectivity.
- Wide operating conditions: −40°C to 85°C temperature rating and 2.7 V–3.6 V supply range accommodate diverse system requirements.
- Parallel interface support: Parallel memory interface with defined 83 MHz clock simplifies use in existing parallel-memory architectures.
Why Choose MT29F256G08CMCABH2-12ITZ:A TR?
This MT29F256G08CMCABH2-12ITZ:A TR device positions itself as a high-density, parallel-interface NAND flash option that balances capacity, package compactness, and defined operating conditions. Its MLC architecture and 32G × 8 organization make it appropriate for designs that need substantial non-volatile storage in a single-package solution.
Engineers and procurement teams looking for a compact 100‑TBGA flash device with clear electrical and thermal parameters (2.7 V–3.6 V, −40°C to 85°C) will find this device suitable for systems requiring parallel-access NAND memory. The device’s specifications support straightforward integration into applications that match its interface and environmental ranges.
Request a quote or contact sales to discuss availability, lead times and pricing for MT29F256G08CMCABH2-12ITZ:A TR.
