MT29F256G08CMCABH2-10Z:A TR

The MT29F256G08CMCABH2-10Z:A TR is a 256 Gbit non-volatile FLASH memory device using NAND MLC technology in a parallel memory organization (32G × 8). It provides high-density storage in a compact 100-TBGA (12 × 18) package for embedded and consumer system designs.

Designed for parallel interface integration, this device operates from a 2.7 V to 3.6 V supply range and supports a 100 MHz clock frequency, targeting applications that require large-capacity, board-mounted NAND flash in thermally and electrically constrained environments.

Key Features

• Memory Type & Technology Non-volatile NAND flash using MLC technology, delivered as 256 Gbit capacity organized as 32G × 8 for high-density data storage.
• Interface & Organization Parallel memory interface with 32G × 8 organization suitable for systems requiring conventional parallel flash connectivity.
• Clock Frequency Supports a 100 MHz clock frequency to match system timing requirements for parallel flash access.
• Power Supply Operates from 2.7 V to 3.6 V, compatible with common 3.0 V system power rails.
• Package Supplied in a 100-TBGA (12 × 18) package that provides a compact footprint for board-level integration.
• Operating Temperature Rated for 0°C to 70°C ambient temperature, aligning with typical commercial-temperature applications.

Typical Applications

• Consumer Electronics High-capacity on-board storage for devices operating within commercial temperature ranges.
• Embedded Systems Local non-volatile storage for embedded controllers and modules requiring parallel NAND flash.
• Data Storage Expansion Board-level NAND flash for products needing compact, high-density memory in a BGA package.

Unique Advantages

• High Storage Density: 256 Gbit capacity enables extensive data storage within a single device, reducing the need for multiple memory components.
• Parallel Interface Flexibility: 32G × 8 organization supports traditional parallel flash system architectures for straightforward integration.
• Compact BGA Packaging: 100-TBGA (12 × 18) package minimizes PCB area while providing a surface-mount solution suitable for space-constrained designs.
• Standard Voltage Compatibility: 2.7 V to 3.6 V supply range aligns with common 3.0 V power domains to simplify power design.
• Commercial Temperature Range: Rated 0°C to 70°C to match typical commercial and consumer product requirements.

Why Choose MT29F256G08CMCABH2-10Z:A TR?

The MT29F256G08CMCABH2-10Z:A TR positions itself as a high-density, parallel NAND MLC flash device in a compact 100-TBGA package, suitable for designers who need substantial on-board non-volatile storage with standard voltage compatibility and a 100 MHz clock interface. Its 32G × 8 organization and 256 Gbit capacity make it appropriate for embedded and consumer applications operating within commercial temperature ranges.

Manufactured by Micron Technology Inc., this device provides a board-level memory option for product designs that prioritize capacity and compact packaging while maintaining compatibility with common parallel flash interfaces and 3.0 V power systems.

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