MT29F256G08CMCABH2-12:A
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 824 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABH2-12:A – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCABH2-12:A is a 256 Gbit non-volatile NAND flash memory device implemented in MLC (Multi-Level Cell) technology with a parallel memory interface. It is organized as 32G × 8 and supplied in a 100-TBGA (12x18) package.
Designed for systems that require high-density parallel flash storage, the device operates from a 2.7 V to 3.6 V supply, supports an 83 MHz clock frequency, and is specified for an ambient operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Type and Technology Non-volatile NAND flash using MLC technology providing 256 Gbit storage capacity.
- Memory Organization Configured as 32G × 8 to support parallel data operations and conventional bus mapping.
- Interface and Clock Parallel memory interface with a specified clock frequency of 83 MHz for synchronized access.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling compatibility with common 3.0 V system rails.
- Package 100-TBGA package (12x18) for compact board-level integration.
- Operating Temperature Specified ambient temperature range of 0 °C to 70 °C (TA) for commercial-temperature applications.
Typical Applications
- Embedded systems Parallel NAND flash storage for code and data in embedded designs requiring non-volatile memory.
- On-board firmware and boot storage Stores firmware, bootloaders, and system images in a compact 100-TBGA footprint.
- Data storage in consumer electronics Provides high-density parallel flash for devices with commercial-temperature requirements.
Unique Advantages
- High-density storage 256 Gbit capacity enables greater data and code retention within a single device footprint.
- Parallel interface simplicity Parallel memory organization (32G × 8) facilitates straightforward integration with parallel memory controllers.
- Standard voltage compatibility 2.7 V–3.6 V supply range aligns with common 3.0 V system power domains.
- Compact package 100-TBGA (12x18) provides a board-space-efficient solution for dense PCB layouts.
- Commercial temperature support Rated for 0 °C to 70 °C ambient operation to match commercial application requirements.
Why Choose MT29F256G08CMCABH2-12:A?
The MT29F256G08CMCABH2-12:A offers a straightforward, high-density parallel NAND flash solution in a compact 100-TBGA package. Its 32G × 8 organization, 83 MHz clock support, and 2.7 V–3.6 V supply make it suitable for designs that require on-board non-volatile storage within commercial-temperature environments.
This device is appropriate for engineers and procurement teams looking for a verified 256 Gbit MLC NAND option that balances density, electrical compatibility, and a small package footprint for embedded and consumer applications.
Request a quote or submit a product inquiry to receive pricing and availability information for the MT29F256G08CMCABH2-12:A.
