MT29F256G08CMCABJ2-10RZ:A TR
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 1,805 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABJ2-10RZ:A TR – IC FLASH 256GBIT PAR 132TBGA
The MT29F256G08CMCABJ2-10RZ:A TR is a 256 Gbit non-volatile NAND flash memory device based on MLC (multi-level cell) technology. It is organized as 32G × 8 and offers a parallel memory interface with a specified clock frequency of 100 MHz.
Designed for board-level integration, this device provides high-density flash storage in a 132-TBGA (12×18) package and operates from a 2.7 V to 3.6 V supply over an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Core 256 Gbit capacity implemented as 32G × 8 using FLASH - NAND (MLC) technology, providing high-density non-volatile storage.
- Interface & Performance Parallel memory interface with a clock frequency of 100 MHz for synchronous data transfer on parallel buses.
- Power Operates from a 2.7 V to 3.6 V supply voltage range to support standard 3.0 V system power rails.
- Package Supplied in a 132-TBGA package (12×18), offering a compact board footprint for high-density implementations.
- Operating Range Specified ambient operating temperature of 0°C to 70°C (TA).
Typical Applications
- Embedded storage systems Provides compact, high-capacity non-volatile storage where a parallel NAND interface is required.
- Board-level memory integration Suited for designs that require a 256 Gbit parallel flash device in a 132-TBGA package.
- System firmware and data retention Used for storing firmware, configuration data, or large data sets in applications operating within the specified voltage and temperature ranges.
Unique Advantages
- High-density storage capacity: 256 Gbit organization (32G × 8) enables substantial non-volatile storage in a single device.
- Parallel interface integration: Parallel memory interface and 100 MHz clocking simplify integration with parallel memory controllers and board designs.
- Wide supply compatibility: 2.7 V to 3.6 V operating range matches common 3.0 V system rails for straightforward power design.
- Compact package footprint: 132-TBGA (12×18) package delivers high density in a compact form factor for space-constrained PCBs.
- MLC NAND technology: FLASH - NAND (MLC) implementation provides multi-level cell storage characteristics in a high-capacity device.
Why Choose IC FLASH 256GBIT PAR 132TBGA?
The MT29F256G08CMCABJ2-10RZ:A TR positions itself as a high-density parallel NAND flash solution suitable for designs that require 256 Gbit of non-volatile storage with a 100 MHz parallel interface. Its 2.7 V to 3.6 V supply range and 132-TBGA package make it a practical option for board-level integration where space and standard system voltages are considerations.
This device is appropriate for engineering teams and procurement focused on embedding high-capacity flash memory into systems that operate within the specified ambient temperature and electrical parameters, offering a clear specification set for integration and validation.
Request a quote or submit an inquiry to discuss pricing, availability, and lead times for the MT29F256G08CMCABJ2-10RZ:A TR.
