MT29F256G08CMCDBJ5-6R:D
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 166 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCDBJ5-6R:D – IC FLASH 256GBIT PAR 132TBGA
The MT29F256G08CMCDBJ5-6R:D is a 256 Gbit non-volatile NAND flash memory device using multi-level cell (MLC) technology. It is organized as 32G × 8 with a parallel memory interface and supports a 167 MHz clock frequency.
This device is supplied in a 132‑TBGA (12 × 18 mm) package, operates over a 2.7 V to 3.6 V supply range, and is specified for an ambient operating temperature range of 0°C to 70°C. It is suited to designs that require high-density parallel flash storage in a compact package.
Key Features
- Memory Core 256 Gbit capacity implemented as 32G × 8 NAND flash using MLC technology for high density.
- Interface Parallel memory interface for systems that require parallel flash connectivity.
- Performance Specified clock frequency of 167 MHz to align with parallel flash timing requirements.
- Power Operates from a 2.7 V to 3.6 V supply range to support common system voltage rails.
- Package 132‑TBGA package (12 × 18 mm) for space-efficient board integration.
- Environmental Commercial operating temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded storage: Use in systems that require parallel NAND flash memory with large capacity and compact packaging.
- Consumer electronics: High-density flash storage where a 256 Gbit MLC device with a parallel interface is appropriate.
- Networking and communications equipment: Local non-volatile storage for firmware and configuration data within the specified voltage and temperature ranges.
Unique Advantages
- High storage density: 256 Gbit capacity supports large local storage requirements without multiple devices.
- Parallel interface compatibility: Simplifies integration into systems designed around parallel flash architectures.
- Compact package: 132‑TBGA (12 × 18 mm) reduces PCB footprint for space-constrained designs.
- Flexible power range: 2.7 V to 3.6 V supply enables operation with common system rails.
- Commercial temperature rating: Specified for 0°C to 70°C to match standard commercial applications.
- Manufacturer backing: Produced by Micron Technology Inc., providing a known source for procurement and lifecycle planning.
Why Choose MT29F256G08CMCDBJ5-6R:D?
The MT29F256G08CMCDBJ5-6R:D delivers a high-capacity, parallel MLC NAND solution in a compact 132‑TBGA package, suitable for designs that need substantial non-volatile storage with a parallel interface. Its specified 167 MHz clock frequency, 2.7 V–3.6 V supply range, and commercial temperature rating make it appropriate for a range of standard embedded and consumer applications.
This device is a fit for customers seeking a Micron-sourced NAND flash component for projects requiring dense storage, space-efficient packaging, and compatibility with parallel memory architectures. Its clear electrical and environmental specifications support predictable integration and lifecycle planning.
If you require pricing, availability, or technical details, request a quote or contact sales to discuss your requirements and obtain a formal quotation.
