MT29F256G08CMCBBH2-10:B
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 541 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCBBH2-10:B – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCBBH2-10:B is a 256 Gbit non-volatile NAND flash memory device using MLC technology with a parallel memory interface. It is organized as 32G × 8, supports a 100 MHz clock, and operates from a 2.7 V to 3.6 V supply.
This device is packaged in a compact 100‑TBGA (12 × 18) package and targets applications requiring high-density parallel flash storage within a commercial temperature range of 0°C to 70°C.
Key Features
- Memory Type: Non-volatile NAND (MLC) flash memory providing persistent storage without external power.
- Density & Organization: 256 Gbit capacity organized as 32G × 8 for high-density data storage in a single device.
- Interface & Performance: Parallel memory interface with a 100 MHz clock frequency for synchronous parallel operation.
- Supply Voltage: Operates from 2.7 V to 3.6 V, compatible with typical 3.3 V system rails.
- Package: 100‑TBGA package, supplier device package noted as 100‑TBGA (12×18) for compact board-level integration.
- Operating Temperature: Rated for commercial use from 0°C to 70°C (TA).
Typical Applications
- Embedded Storage: Used where high-density non-volatile memory is required for firmware, data logging, or local file systems.
- Consumer Electronics: Integration into compact devices that require sizable flash capacity in a small 100‑TBGA footprint.
- Industrial Equipment (Commercial Range): Systems operating within 0°C to 70°C that need parallel NAND flash with standard 3.3 V supply compatibility.
Unique Advantages
- High Storage Capacity: 256 Gbit of NAND flash provides substantial on-board non-volatile storage in a single device.
- Parallel Interface: Parallel memory interface and a 100 MHz clock enable straightforward integration with parallel memory controllers.
- Compact TBGA Packaging: 100‑TBGA (12×18) package reduces PCB footprint while delivering high capacity.
- Flexible Supply Range: 2.7 V to 3.6 V operation supports common system power rails for easier power domain integration.
- Commercial Temperature Suitability: Rated for 0°C to 70°C, appropriate for typical commercial electronics environments.
Why Choose IC FLASH 256GBIT PAR 100TBGA?
The MT29F256G08CMCBBH2-10:B provides a high-density MLC NAND flash solution in a compact 100‑TBGA package, combining large capacity with a parallel interface and a 100 MHz clock for systems that require substantial non-volatile storage. Its 2.7 V–3.6 V supply range and 0°C–70°C operating window make it suitable for a wide range of commercial embedded applications.
This device is appropriate for designers and procurement teams specifying board-level, high-capacity parallel flash where package density, standard voltage compatibility, and commercial temperature operation are primary selection criteria.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F256G08CMCBBH2-10:B.
