MT29F256G08CMCABH2-12ITZ:A

IC FLASH 256GBIT PAR 100TBGA
Part Description

IC FLASH 256GBIT PAR 100TBGA

Quantity 293 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package100-TBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeIndustrial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging100-TBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level1 (Unlimited)RoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT29F256G08CMCABH2-12ITZ:A – IC FLASH 256GBIT PAR 100TBGA

The MT29F256G08CMCABH2-12ITZ:A is a 256 Gbit non-volatile NAND Flash memory device using MLC technology with a 32G × 8 memory organization. It provides a parallel memory interface in a compact 100‑TBGA (12×18) package for designs requiring high-density parallel flash storage.

Key device attributes include an 83 MHz clock frequency, a 2.7 V to 3.6 V supply range, and an operating temperature range of −40 °C to 85 °C, enabling use in systems that require wide voltage tolerance and extended temperature performance.

Key Features

  • Memory Core 256 Gbit NAND Flash (MLC) organized as 32G × 8, delivering high storage capacity in a single device.
  • Interface Parallel memory interface with an 83 MHz clock frequency for parallel data access.
  • Power Wide operating voltage range from 2.7 V to 3.6 V to support common system power domains.
  • Package 100‑TBGA package (12×18) providing a compact footprint for high-density board layouts.
  • Temperature Range Rated for operation from −40 °C to 85 °C (TA), suitable for systems requiring extended ambient temperature performance.
  • Memory Format Non-volatile FLASH memory optimized for parallel storage applications.

Typical Applications

  • Embedded Storage Systems — Provides 256 Gbit of parallel NAND storage for embedded products that require large non-volatile memory capacity.
  • Industrial Equipment — The −40 °C to 85 °C operating range and wide supply voltage make it suitable for industrial applications operating across varied environments.
  • High-Density Board Designs — The 100‑TBGA (12×18) package offers a compact form factor for designs constrained by PCB area while needing large storage capacity.

Unique Advantages

  • High storage density: 256 Gbit capacity in a single device enables large non-volatile storage without multiple components.
  • Parallel access: Parallel memory interface with an 83 MHz clock supports established parallel flash system architectures.
  • Wide voltage compatibility: 2.7 V to 3.6 V supply range fits common system power rails and simplifies integration.
  • Compact packaging: 100‑TBGA (12×18) package consolidates high capacity into a small footprint for space-constrained designs.
  • Extended temperature operation: −40 °C to 85 °C rating supports deployments across a broad ambient temperature range.

Why Choose IC FLASH 256GBIT PAR 100TBGA?

This Micron 256 Gbit parallel NAND Flash device is positioned for designs that need large, non-volatile storage in a compact package with support for common system voltages and extended operating temperatures. Its MLC NAND architecture and 32G × 8 organization deliver substantial capacity in a single 100‑TBGA package, simplifying BOM and board layout for high-density storage applications.

Ideal for engineers specifying parallel NAND memory where capacity, packaging density, and operating range are primary considerations, the MT29F256G08CMCABH2-12ITZ:A offers a clear, spec-driven option for integration into embedded and industrial systems.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F256G08CMCABH2-12ITZ:A.

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