MT29F256G08CMCABH2-10Z:A
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 330 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABH2-10Z:A – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCABH2-10Z:A is a non-volatile FLASH NAND (MLC) memory device providing 256 Gbit of storage organized as 32G × 8. It features a parallel memory interface and a 100 MHz clock frequency for system-level integration.
Packaged in a 100-TBGA (12×18) format and specified for a 2.7 V to 3.6 V supply range, this device is intended for designs that require large-capacity parallel NAND flash in a board-mounted TBGA package within a 0°C to 70°C operating temperature range.
Key Features
- Memory Core FLASH - NAND (MLC) technology with a 256 Gbit capacity organized as 32G × 8, delivering high-density non-volatile storage in a single device.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz for synchronous system access.
- Power Voltage supply range of 2.7 V to 3.6 V, compatible with common system supply rails.
- Package 100-TBGA package; supplier device package listed as 100-TBGA (12×18) for board-level integration.
- Operating Conditions Commercial operating temperature range of 0°C to 70°C (TA).
- Memory Format & Mounting MemoryFormat: FLASH and specified as Non-Volatile mounting type for persistent data storage.
Unique Advantages
- High-density single-device storage: 256 Gbit capacity enables consolidation of large non-volatile storage into one component.
- Parallel interface with 100 MHz clock: Defined parallel interface and clock frequency support predictable timing and integration into parallel-memory architectures.
- Wide supply voltage range: 2.7 V to 3.6 V operation allows use with common system voltage rails.
- Standard TBGA packaging: 100-TBGA (12×18) package supports board-level mounting and assembly processes.
- Commercial temperature specification: Device rated for 0°C to 70°C, suitable for commercial-temperature applications.
Why Choose IC FLASH 256GBIT PAR 100TBGA?
The MT29F256G08CMCABH2-10Z:A positions itself as a high-density parallel NAND flash option that combines 256 Gbit capacity with a defined 100 MHz clock and a 100-TBGA package. Its electrical and mechanical specifications—parallel interface, 2.7 V–3.6 V supply, and 0°C–70°C operating range—make it suitable for designs requiring large, board-mounted non-volatile memory in a standard TBGA form factor.
This device is appropriate for customers and designs that prioritize integrated high-capacity FLASH storage with clear interface and package characteristics, enabling predictable integration and production-level assembly considerations.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F256G08CMCABH2-10Z:A.
