MT29F256G08CMCABH2-10RZ:A TR
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 1,362 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABH2-10RZ:A TR – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCABH2-10RZ:A TR is a 256 Gbit non-volatile NAND flash memory device using MLC (multi-level cell) technology and a parallel memory interface. It is organized as 32G × 8 and provided in a 100-TBGA (12×18) package.
Key electrical and environmental characteristics include a 100 MHz clock frequency, a supply voltage range of 2.7 V to 3.6 V, and an operating ambient temperature range of 0°C to 70°C.
Key Features
- Memory Core Non-volatile NAND flash (MLC) technology delivering 256 Gbit of storage capacity.
- Memory Organization Configured as 32G × 8 for byte-wide access and straightforward memory mapping.
- Interface & Performance Parallel memory interface with a 100 MHz clock frequency to match parallel host architectures.
- Voltage Operates from a 2.7 V to 3.6 V supply range to accommodate systems within that voltage window.
- Package 100-TBGA (12×18) package for high-density board mounting.
- Operating Temperature Specified ambient temperature range of 0°C to 70°C (TA).
- Memory Format & Size FLASH memory format with a total capacity of 256 Gbit.
Unique Advantages
- High-density storage: 256 Gbit capacity in a single device reduces the need for multiple memory packages on the board.
- Parallel interface compatibility: Parallel memory interface and 100 MHz clock frequency simplify integration with parallel host controllers.
- Wide supply range: 2.7 V–3.6 V voltage range provides flexibility across systems requiring that operating window.
- Compact, mountable package: 100-TBGA (12×18) offers a small-footprint solution for space-constrained board designs.
- Commercial temperature rating: 0°C–70°C operating range targets standard commercial applications.
Why Choose IC FLASH 256GBIT PAR 100TBGA?
The IC FLASH 256GBIT PAR 100TBGA provides a high-density MLC NAND flash option in a compact 100-TBGA package, delivering 256 Gbit of parallel-access non-volatile storage. Its 32G × 8 organization, 100 MHz clock, and 2.7 V–3.6 V operating window make it suitable for designs that require substantial on-board flash capacity with parallel interface connectivity.
This device is appropriate for customers seeking a straightforward, high-capacity flash component in a compact package and standard commercial temperature range, enabling simplified board layouts and predictable electrical requirements.
Request a quote or contact sales to obtain pricing, lead-time information, and availability for the MT29F256G08CMCABH2-10RZ:A TR.
