MT29F256G08CMCABH2-10RZ:A
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 1,202 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABH2-10RZ:A – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CMCABH2-10RZ:A is a non-volatile NAND flash memory device providing 256 Gbit of storage in a Multi-Level Cell (MLC) architecture. It offers a parallel memory interface and is packaged in a compact 100-TBGA (12x18) package.
This device is suited for systems requiring high-density parallel flash storage with a supply voltage range of 2.7 V to 3.6 V and an operating clock frequency specified at 100 MHz. The operating temperature range is 0°C to 70°C.
Key Features
- Memory Core 256 Gbit capacity implemented as 32G × 8 organization using NAND flash (MLC) technology.
- Interface Parallel memory interface with a specified clock frequency of 100 MHz for host integration.
- Power Wide supply voltage range from 2.7 V to 3.6 V to accommodate common system power rails.
- Package 100-TBGA package (12x18) for compact board-level integration.
- Operating Conditions Rated for operation from 0°C to 70°C (TA).
- Memory Format Non-volatile flash memory suitable for persistent storage applications.
Typical Applications
- High-density storage subsystems — Provides 256 Gbit of NAND storage for systems that require substantial non-volatile capacity in a single device.
- Embedded systems — Parallel interface and 100 MHz clock make it suitable for embedded designs that integrate on-board flash.
- Compact device assemblies — 100-TBGA (12x18) package supports designs with constrained PCB area.
Unique Advantages
- 256 Gbit density — High-capacity single-device storage reduces the need for multiple memory components.
- Parallel 100 MHz interface — Enables straightforward integration with parallel memory controllers supporting that clock rate.
- MLC NAND technology — Delivers multi-level cell flash storage in a standard NAND format.
- Broad supply voltage range — Operates from 2.7 V to 3.6 V for compatibility with common system power rails.
- Compact 100-TBGA package — Small footprint (12x18) eases placement in space-constrained designs.
- Specified operating range — Defined 0°C to 70°C temperature rating for standard commercial environments.
Why Choose MT29F256G08CMCABH2-10RZ:A?
The MT29F256G08CMCABH2-10RZ:A combines high-density 256 Gbit MLC NAND flash with a parallel interface and a compact 100-TBGA package, offering a straightforward option for systems that need substantial non-volatile storage in a small footprint. Its 2.7 V to 3.6 V supply range, 100 MHz clock specification, and commercial operating temperature rating align it with designs that require reliable, board-level flash integration.
This device is well suited for designers and procurement teams specifying high-density parallel flash for embedded and compact systems where package size, interface compatibility, and voltage flexibility are primary selection criteria.
Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the MT29F256G08CMCABH2-10RZ:A.
