MT29F256G08CKCDBJ5-6R:D
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 107 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CKCDBJ5-6R:D – IC FLASH 256GBIT PAR 132TBGA
The MT29F256G08CKCDBJ5-6R:D is a 256 Gbit non-volatile NAND flash memory device implemented in multi-level cell (MLC) architecture. It is organized as 32G x 8 with a parallel memory interface and is offered in a 132-TBGA (12×18) package.
Designed for applications requiring high-density parallel flash storage, the device operates from a 2.7 V to 3.6 V supply and supports a 167 MHz clock, with an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Technology NAND Flash, multi-level cell (MLC) architecture providing non-volatile storage.
- Density & Organization 256 Gbit total capacity organized as 32G × 8 for byte-wide parallel access.
- Interface Parallel memory interface suited to systems expecting byte-wide flash connectivity.
- Clock Frequency 167 MHz clock frequency specification for timing reference.
- Power Operating voltage range of 2.7 V to 3.6 V to match common system power rails.
- Package Supplied in a 132-TBGA package (12×18) for board-level integration.
- Operating Temperature Specified ambient temperature range: 0°C to 70°C (TA).
Typical Applications
- Embedded storage systems Provides high-density non-volatile storage where parallel flash memory is required.
- Data buffer and file storage Used in designs needing 256 Gbit of organized NAND storage with byte-wide access.
- Board-level integration The 132-TBGA (12×18) package supports compact mounting in constrained PCB layouts.
Unique Advantages
- High-capacity non-volatile storage: 256 Gbit density enables large storage footprints within a single device.
- Byte-wide memory organization: 32G × 8 organization simplifies interfacing with parallel data buses.
- Standard supply voltage range: 2.7 V to 3.6 V operation aligns with common system power rails for straightforward integration.
- Compact TBGA package: 132-TBGA (12×18) form factor supports space-conscious board designs.
- Specified operating range: Rated for 0°C to 70°C ambient operation to match typical commercial-temperature applications.
Why Choose MT29F256G08CKCDBJ5-6R:D?
The MT29F256G08CKCDBJ5-6R:D combines high-density 256 Gbit MLC NAND flash with a byte-wide parallel interface and a compact 132-TBGA package, offering a clear option for designs that require significant non-volatile storage in a board-mounted package. Its 2.7 V–3.6 V supply compatibility and 0°C–70°C operating range make it suitable for commercial-temperature hardware environments.
This device is appropriate for engineers and procurers seeking a single-device solution for large-capacity parallel flash storage with defined electrical and mechanical characteristics, enabling predictable integration into system designs.
For pricing, availability, or to request a quote, please contact sales or submit a request for a quotation with the full part number MT29F256G08CKCDBJ5-6R:D.
