MT29F256G08CKCABH2-12Z:A

The MT29F256G08CKCABH2-12Z:A is a 256 Gbit non-volatile FLASH memory device based on NAND (MLC) technology. It is organized as 32G × 8 and provides parallel memory access with an 83 MHz clock frequency.

Designed for applications that require high-density parallel NAND storage in a compact package, this device balances density, interface simplicity, and standard commercial temperature operation.

Key Features

• Memory Type & Technology Non-volatile FLASH using NAND (MLC) technology providing 256 Gbit of storage organized as 32G × 8.
• Interface & Performance Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel access.
• Operating Voltage Single-supply operation across a 2.7 V to 3.6 V range to match common system power rails.
• Package Compact 100-TBGA package (12 × 18 mm) suitable for space-constrained board designs.
• Temperature Range Commercial operating ambient range from 0°C to 70°C (TA).
• Memory Format & Organization FLASH memory format with 32G × 8 organization to support high-density data storage.

Typical Applications

• Embedded storage — Provides high-density non-volatile memory for embedded systems requiring parallel NAND flash.
• Consumer electronics — Suited for devices that need compact, high-capacity on-board storage within commercial temperature limits.
• On-board code and data storage — Useful for storing firmware images, application data, or large data sets where parallel NAND is required.

Unique Advantages

• High storage density: 256 Gbit capacity supports large data and code storage in a single device, reducing the need for multiple components.
• Parallel interface simplicity: Parallel memory bus and 83 MHz clock simplify integration with systems designed for parallel NAND access.
• Standard supply range: 2.7 V to 3.6 V operation enables compatibility with common system power domains.
• Compact TBGA package: 100-TBGA (12 × 18 mm) package minimizes board footprint for space-constrained designs.
• Commercial temperature suitability: Rated for 0°C to 70°C operation for typical commercial electronics environments.
• MLC NAND technology: Multi-level cell NAND provides a balance of capacity and cost-effective storage density.

Why Choose MT29F256G08CKCABH2-12Z:A?

The MT29F256G08CKCABH2-12Z:A positions itself as a high-density parallel NAND flash option that combines 256 Gbit capacity, a parallel 83 MHz interface, and a compact 100-TBGA package. It is appropriate for designs that require substantial non-volatile storage within standard commercial temperature and voltage ranges.

For engineers and procurement teams seeking a single-device solution to consolidate storage needs, this device offers straightforward integration, reduced component count, and a clear specification set for capacity, interface, package, and operating conditions.

Request a quote or contact sales to discuss pricing, availability, and how this device can fit into your design requirements.