MT29F256G08CKCABH2-12Z:A TR
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 216 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CKCABH2-12Z:A TR – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CKCABH2-12Z:A TR is a 256 Gbit NAND flash memory organized as 32G x 8 using multi-level cell (MLC) technology. It provides non-volatile parallel flash storage in a 100-TBGA (12×18) package, operating from 2.7 V to 3.6 V with a clock frequency up to 83 MHz.
This device is intended for systems that require parallel NAND flash memory with compact packaging and defined operating conditions, offering a balance of storage density and integration for embedded and system-level designs.
Key Features
- Memory Type & Technology Non-volatile NAND flash using MLC technology, provided in a FLASH memory format.
- Capacity & Organization 256 Gbit total capacity, organized as 32G × 8 for byte-wide access and system mapping.
- Interface & Performance Parallel memory interface with a clock frequency specified at 83 MHz for synchronous operation.
- Supply Voltage Operates across a 2.7 V to 3.6 V supply range, supporting common 3.0 V system rails.
- Package 100-TBGA package (12 × 18 mm) for high-density board-level integration.
- Operating Temperature Rated for 0°C to 70°C (TA), suitable for standard commercial temperature environments.
Unique Advantages
- High storage density: 256 Gbit capacity supports large non-volatile data storage within a single device.
- Byte-wide organization: 32G × 8 organization provides convenient 8-bit access for parallel memory architectures.
- Compact BGA package: 100-TBGA (12×18) packaging reduces board footprint while enabling high I/O density.
- Flexible supply range: 2.7 V–3.6 V operation accommodates common system voltage levels.
- MLC NAND technology: Multi-level cell implementation offers a balance of capacity and integration for embedded storage needs.
Why Choose IC FLASH 256GBIT PAR 100TBGA?
The MT29F256G08CKCABH2-12Z:A TR positions itself as a high-capacity parallel NAND flash device that combines 256 Gbit density, MLC technology, and a compact 100-TBGA footprint. Its defined electrical and thermal specifications make it suitable for designs that require non-volatile parallel flash memory operating at standard commercial temperatures and 3 V-class supply rails.
This device is appropriate for engineers and procurement teams sourcing parallel flash memory for embedded systems where board space, interface compatibility, and capacity are primary selection criteria. Its specification set supports straightforward integration and predictable electrical behavior across the stated operating range.
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