MT29F256G08CKCABH2-10Z:A
| Part Description |
IC FLASH 256GBIT PAR 100TBGA |
|---|---|
| Quantity | 875 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CKCABH2-10Z:A – IC FLASH 256GBIT PAR 100TBGA
The MT29F256G08CKCABH2-10Z:A is a 256 Gbit non-volatile NAND flash memory device using MLC technology. It provides parallel memory organization and a 100-TBGA (12×18) package for compact board-level integration.
Manufactured by Micron Technology Inc., this device targets systems that require high-density NAND flash storage with a parallel interface, 100 MHz clock operation, and standard commercial temperature and voltage ranges.
Key Features
- Memory Type & Technology Non-volatile FLASH; NAND MLC technology as specified.
- Capacity & Organization 256 Gbit total capacity organized as 32G × 8.
- Interface & Performance Parallel memory interface with a clock frequency of 100 MHz.
- Voltage Range Operates from 2.7 V to 3.6 V, suitable for common 3 V system rails.
- Package & Mounting 100-TBGA package (12×18), enabling compact surface-mount integration.
- Operating Temperature Rated for 0°C to 70°C (TA) operating ambient temperature.
- Memory Format FLASH memory format for non-volatile data storage.
Unique Advantages
- High-density storage: 256 Gbit capacity supports large data or firmware storage requirements within a single device.
- Parallel interface compatibility: Parallel memory interface with 100 MHz clock simplifies integration into systems designed for parallel NAND.
- Standard voltage operation: 2.7 V to 3.6 V supply range aligns with common 3 V system designs.
- Compact TBGA packaging: 100-TBGA (12×18) package saves PCB area while supporting surface-mount assembly.
- Commercial temperature rating: 0°C to 70°C operating range for general commercial applications.
- Established supplier: Manufactured by Micron Technology Inc., providing traceable sourcing for design and procurement.
Why Choose IC FLASH 256GBIT PAR 100TBGA?
The MT29F256G08CKCABH2-10Z:A combines high-density MLC NAND flash with a parallel interface and compact 100-TBGA package, offering a straightforward option for systems that need substantial non-volatile storage within standard commercial temperature and voltage ranges. Its organization (32G × 8), 100 MHz clock capability, and 2.7 V–3.6 V operation make it suitable for designs that specify parallel flash memory and require a small-board footprint.
As a Micron Technology Inc. device, it provides a defined set of electrical, package, and environmental specifications to support design, procurement, and BOM decisions where these exact characteristics are required.
If you need pricing, availability, or technical sourcing information for the MT29F256G08CKCABH2-10Z:A, request a quote or submit an inquiry to receive further details.
