MT29F256G08CJABBWP-12:B TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 565 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJABBWP-12:B TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJABBWP-12:B TR is a 256 Gbit non-volatile NAND flash memory device using MLC technology with a parallel interface. It is organized as 32G × 8 and offered in a 48‑TSOP I package.
Designed for systems that require parallel flash storage, the device operates from a 2.7 V to 3.6 V supply and supports an 83 MHz clock frequency within an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH – NAND (MLC) technology providing 256 Gbit total capacity.
- Memory Organization Arranged as 32G × 8 to match parallel byte-wide data paths.
- Interface Parallel memory interface for integration with parallel memory controllers and systems.
- Clock Frequency Supported clock frequency of 83 MHz for timed read/write operations.
- Supply Voltage Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system rails.
- Package 48‑TFSOP (48‑TSOP I, 0.724", 18.40 mm width) surface-mount package for compact board-level integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
Typical Applications
- Embedded Storage Systems Use as high-capacity non-volatile storage where a parallel NAND flash interface is required.
- Consumer Electronics Integrate as onboard flash memory in devices that operate within the specified 0°C to 70°C range and require 256 Gbit capacity.
- Board-Level Memory Expansion Provide byte-wide parallel memory expansion in compact 48‑TSOP I packages for PCB-constrained designs.
Unique Advantages
- High-density storage: 256 Gbit capacity in a single device enables consolidation of large storage requirements into one package.
- Byte-wide organization: 32G × 8 arrangement simplifies integration with parallel data buses and controllers.
- Standard voltage range: 2.7 V to 3.6 V operation aligns with common 3.3 V system power rails for straightforward power design.
- Compact TSOP footprint: 48‑TSOP I package offers a space-efficient solution for board-level memory placement.
- Defined operating window: Specified 0°C to 70°C ambient temperature range supports typical commercial-grade deployments.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
This NAND MLC flash device combines a high 256 Gbit density with a parallel 32G × 8 organization and a compact 48‑TSOP I package, making it suitable for designs that require significant on-board non-volatile memory in a small footprint. Its 2.7 V to 3.6 V supply compatibility and 83 MHz clock specification provide clear electrical parameters for system integration.
Use this device in projects and products where predictable operating conditions (0°C to 70°C) and a parallel flash interface are required; it is aimed at designers seeking a high-capacity NAND flash solution with defined package and electrical characteristics.
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