MT29F256G08CJABBWP-12IT:B
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 468 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJABBWP-12IT:B – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJABBWP-12IT:B is a 256 Gbit non-volatile NAND flash memory device using MLC (Multi-Level Cell) technology. It is organized as 32G x 8 and provides a parallel memory interface for high-density storage implementations.
Offered in a 48-TSOP I package and supporting a 2.7 V–3.6 V supply range with an operating temperature of -40°C to 85°C (TA), this device targets designs that require stable, high-capacity parallel flash memory in a compact TSOP footprint.
Key Features
- Memory Type & Technology Non-volatile FLASH using NAND MLC technology for multi-bit storage per cell.
- Capacity & Organization 256 Gbit total capacity, organized as 32G × 8 to simplify system addressing and memory mapping.
- Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz.
- Supply Voltage Operates from 2.7 V to 3.6 V to match common system power rails.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) compact board-level package for space-constrained layouts.
- Operating Temperature Rated for -40°C to 85°C (TA) to accommodate a broad range of environmental conditions.
Typical Applications
- Embedded Systems Storage — High-density parallel NAND for system-level non-volatile data and file storage in embedded designs.
- On-board Firmware and Code Storage — Use as primary or supplementary flash for firmware, boot code, and large code images where a parallel interface is required.
- Mass Non-Volatile Data Storage — Applications that require consolidated high-capacity storage on a TSOP footprint.
Unique Advantages
- High-density 256 Gbit capacity: Enables consolidation of large storage needs into a single device, reducing BOM complexity.
- Parallel interface with 83 MHz clock: Supports integration with parallel memory controllers and legacy parallel bus designs.
- Wide supply voltage range: 2.7 V–3.6 V operation provides flexibility across different system power domains.
- Industrial temperature range: -40°C to 85°C rating supports use in environments requiring extended temperature tolerance.
- Compact 48-TSOP I package: Small board footprint that eases placement in space-constrained PCBs.
Why Choose MT29F256G08CJABBWP-12IT:B?
The MT29F256G08CJABBWP-12IT:B positions itself as a high-capacity parallel NAND flash solution that balances storage density, package compactness, and broad operating conditions. Its 256 Gbit MLC organization and 48-TSOP I package make it suitable for designs where a parallel interface and substantial non-volatile memory are required.
This device is appropriate for engineers and procurement teams specifying onboard flash for embedded systems, firmware storage, or any application needing a standardized TSOP footprint, a 2.7 V–3.6 V supply window, and -40°C to 85°C operation.
Request a quote or contact sales to inquire about availability, pricing, and lead times for MT29F256G08CJABBWP-12IT:B.
