MT29F256G08CJABAWP:B

The MT29F256G08CJABAWP:B is a 256 Gbit non-volatile NAND flash memory device implemented with MLC technology and presented in a parallel memory organization (32G × 8). It provides high-density flash storage in a 48-TSOP I package for designs requiring parallel flash memory with a 2.7 V to 3.6 V supply and a commercial operating temperature range of 0°C to 70°C.

Key Features

• Memory Type & Technology Non-volatile FLASH NAND using MLC (multi-level cell) technology for high-density storage.
• Capacity & Organization 256 Gbit total capacity organized as 32G × 8 to support parallel data paths.
• Interface Parallel memory interface for direct parallel access and system integration.
• Supply Voltage Operates from 2.7 V to 3.6 V, accommodating common system power rails.
• Package & Mounting 48-TFSOP (0.724", 18.40 mm width) in a 48-TSOP I supplier package for surface-mount PCB assembly.
• Operating Temperature Commercial temperature range: 0°C to 70°C (TA).

Typical Applications

• Embedded Storage Systems Provides 256 Gbit of non-volatile storage for systems requiring parallel NAND flash capacity.
• Consumer Electronics Integration in consumer devices that use parallel flash memory and operate within a 0°C to 70°C range.
• Firmware and Code Storage Suitable for storing firmware or large code images where a parallel flash interface is required.
• Data Logging and Buffering High-density MLC NAND memory for applications that require substantial non-volatile buffer or log storage.

Unique Advantages

• High-density storage: 256 Gbit capacity enables large data and firmware storage within a single device footprint.
• Parallel interface flexibility: 32G × 8 organization with a parallel memory interface supports designs that use parallel bus architectures.
• Broad supply range: 2.7 V to 3.6 V operation matches common 3.0 V system rails for straightforward power integration.
• Industry-standard package: 48-TFSOP / 48-TSOP I package enables surface-mount PCB assembly and aligns with common board layouts.
• Commercial temperature rating: 0°C to 70°C operating range for general-purpose and consumer applications.

Why Choose MT29F256G08CJABAWP:B?

The MT29F256G08CJABAWP:B positions itself as a high-density, parallel NAND flash option for designs that require a 256 Gbit non-volatile memory solution in a compact 48-TSOP I package. Its MLC NAND architecture and 32G × 8 organization offer designers a straightforward path to integrate substantial flash capacity into systems operating on 2.7 V–3.6 V rails within a commercial temperature envelope.

This device is suited to engineers and procurement teams targeting embedded storage, firmware storage, or data logging applications where a parallel flash interface and a standardized package form factor are required. The explicit electrical and mechanical specifications support predictable integration and long-term design planning.

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