MT29F256G08CJAABWP-12Z:A TR

The MT29F256G08CJAABWP-12Z:A TR is a 256 Gbit non-volatile NAND flash memory device using MLC (multi-level cell) technology. It is organized as 32G x 8 and implements a parallel memory interface for integration into systems requiring high-density NAND storage.

Designed for commercial-temperature applications, the device operates from 0°C to 70°C and accepts a supply voltage range of 2.7 V to 3.6 V. It is supplied in a 48-TSOP I package (18.40 mm width) suitable for surface-mount assembly.

Key Features

• Memory Core 256 Gbit capacity organized as 32G × 8 using MLC NAND flash for dense non-volatile storage.
• Interface & Clock Parallel memory interface with a specified clock frequency of 83 MHz for synchronous operation.
• Voltage Supply Operates from 2.7 V to 3.6 V, enabling compatibility with common 3 V system rails.
• Operating Temperature Rated for commercial operation from 0°C to 70°C (TA).
• Package 48-TFSOP / 48-TSOP I surface-mount package with a 0.724" (18.40 mm) width for board-level integration.
• Memory Format & Organization FLASH NAND (MLC) technology in a parallel 8-bit organization to support high-density data storage.

Typical Applications

• Embedded Systems — Provision of high-density non-volatile storage in commercial embedded designs within the 0°C–70°C operating range.
• Firmware and Boot Storage — Storage of firmware images, boot code, and system software in devices using a parallel NAND interface.
• Mass Data Storage Modules — Integration into modules or boards that require 256 Gbit NAND organized as 32G × 8.

Unique Advantages

• High-density storage: 256 Gbit capacity supports large data and code footprints while minimizing board area devoted to non-volatile memory.
• Parallel 8-bit organization: 32G × 8 memory organization simplifies data bus integration for systems designed around parallel NAND.
• MLC NAND technology: Multi-level cell architecture delivers higher bit density per die compared to single-level cell approaches.
• Standard supply voltage: 2.7 V to 3.6 V range aligns with common 3 V system power rails for straightforward power design.
• Commercial temperature rating: 0°C–70°C specification supports typical consumer and commercial product environments.
• Industry-standard package: 48-TSOP I (0.724", 18.40 mm width) facilitates surface-mount assembly and reference PCB layouts.

Why Choose IC FLASH 256GBIT PAR 48TSOP I?

The MT29F256G08CJAABWP-12Z:A TR provides a straightforward, high-density NAND flash solution for designs that require 256 Gbit of non-volatile storage in a parallel 8-bit organization. Its MLC architecture, standard 48-TSOP I package, and 2.7 V–3.6 V supply range make it suitable for commercial embedded applications and storage modules where board-space efficiency and established package formats matter.

This device is well suited to engineers and procurement teams specifying parallel NAND flash for firmware, boot, and mass-storage uses within the stated temperature and voltage parameters. The combination of capacity, package, and interface supports repeatable integration into product designs that rely on standard NAND footprints and electrical characteristics.

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