MT29F256G08CJAABWP-12RZ:A

The MT29F256G08CJAABWP-12RZ:A is a 256 Gbit non-volatile NAND flash memory device implemented with MLC technology and organized as 32G × 8. It provides parallel memory interface connectivity and is supplied in a 48-TSOP I package for board-level integration.

This device targets designs that require high-density parallel flash storage with a defined clock rate and standard commercial operating range, offering a specific combination of capacity, interface, and package characteristics for embedded applications.

Key Features

• Memory Core Non-volatile NAND flash using MLC technology, providing 256 Gbit total capacity organized as 32G × 8.
• Interface Parallel memory interface for direct connection to parallel memory controllers or host systems.
• Performance Specified clock frequency of 83 MHz for timing reference in system designs.
• Power Operating supply voltage range from 2.7 V to 3.6 V to support common system power rails.
• Package Available in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) standard surface-mount package for compact board implementation.
• Temperature Range Commercial operating temperature range of 0°C to 70°C (TA).

Typical Applications

• Embedded Systems — Provides 256 Gbit parallel NAND flash storage for embedded designs that require on-board non-volatile memory with a parallel interface.
• Consumer Electronics — Suits consumer devices that need high-density flash in a compact 48-TSOP I package and operate within commercial temperature ranges.
• Data Storage Modules — Used in storage modules and board-level storage implementations where a parallel NAND interface and MLC density are required.
• Networking and Communications Equipment — Integrates into systems requiring parallel flash for firmware or large non-volatile data storage at 2.7–3.6 V supply levels.

Unique Advantages

• High-density 256 Gbit capacity: Enables substantial on-board non-volatile storage in a single device, minimizing the need for multiple components.
• Parallel interface simplicity: Direct parallel memory interface supports straightforward integration with parallel memory controllers and existing board layouts.
• MLC NAND technology: Multi-level cell architecture increases storage density per die, providing a balance between capacity and footprint.
• Standard 48-TSOP I package: Industry-standard 48-TFSOP (0.724", 18.40 mm width) form factor supports compact PCB designs and established assembly processes.
• Flexible supply voltage: 2.7 V to 3.6 V operating range accommodates common system power rails for ease of power design.
• Commercial temperature rating: 0°C to 70°C operation matches many mainstream electronic product environments.

Why Choose IC FLASH 256GBIT PAR 48TSOP I?

The MT29F256G08CJAABWP-12RZ:A is positioned for designs that need a defined combination of high-capacity MLC NAND flash, a parallel interface, and a compact 48-TSOP I package. Its specified 83 MHz clock reference, 2.7–3.6 V supply range, and commercial temperature rating make it suitable for systems where these concrete parameters align with system requirements.

Choose this Micron flash device when your design calls for verified density and organization (32G × 8), predictable electrical requirements, and a familiar surface-mount package to support scalable board-level integration and supply-chain consistency.

If you need pricing, availability, or lead-time information, request a quote or contact sales to submit a quote inquiry for the MT29F256G08CJAABWP-12RZ:A.