MT29F256G08CJAAAWP:A
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 368 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAAAWP:A – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJAAAWP:A is a 256 Gbit non-volatile flash memory device based on NAND (MLC) technology with a parallel memory interface. It is organized as 32G × 8 and supplied in a 48-TSOP I (48-TFSOP) package, offering a high-density flash solution in a compact footprint.
This device targets designs that require parallel-access flash storage with a voltage supply range of 2.7 V to 3.6 V and commercial operating temperature from 0°C to 70°C.
Key Features
- Memory Core Non-volatile NAND flash (MLC) technology providing persistent data storage without power.
- Organization & Capacity 256 Gbit total capacity organized as 32G × 8 for byte-oriented parallel access.
- Interface Parallel memory interface suitable for systems that use parallel flash addressing and data transfers.
- Power Operating supply voltage range of 2.7 V to 3.6 V, supporting common 3 V system rails.
- Package 48-TFSOP / 48-TSOP I package with a 0.724" (18.40 mm) width, providing a compact surface-mount footprint.
- Operating Temperature Commercial temperature range of 0°C to 70°C (TA).
- Memory Format FLASH memory format suitable for non-volatile data and code storage.
Typical Applications
- Embedded storage — Provides 256 Gbit of parallel NAND flash for embedded systems requiring high-density non-volatile memory.
- Consumer devices — Used where parallel flash memory is needed in a compact 48-TSOP I package with a 3 V supply.
- Electronic modules and boards — Fits designs that integrate parallel flash for data or firmware storage within a 0°C to 70°C operating range.
Unique Advantages
- High storage density: 256 Gbit capacity in a single device reduces the need for multiple components to achieve large non-volatile storage.
- Parallel interface compatibility: Byte-oriented 32G × 8 organization simplifies integration into systems designed for parallel flash access.
- Flexible power requirements: 2.7 V–3.6 V supply range aligns with common 3 V system architectures.
- Compact TSOP package: 48-TSOP I (0.724", 18.40 mm wide) package offers a small board footprint for space-constrained designs.
- Commercial temperature suitability: 0°C–70°C operating range supports a wide range of general-purpose applications.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
The MT29F256G08CJAAAWP:A delivers high-density, parallel NAND flash storage in a compact 48-TSOP I package, making it suitable for designs that need substantial non-volatile memory with byte-oriented access. Its 2.7 V–3.6 V supply range and commercial temperature rating align it with many general-purpose electronic systems.
This device is appropriate for engineers and procurement teams specifying high-capacity parallel flash where board space, supply voltage compatibility, and a standard TSOP footprint are important considerations.
Request a quote or contact sales to discuss pricing, availability, and lead time for MT29F256G08CJAAAWP:A.
