MT29F256G08CJAAAWP-Z:A
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 609 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAAAWP-Z:A – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJAAAWP-Z:A is a 256 Gbit non-volatile NAND flash memory device using MLC technology with a parallel memory interface. It provides high-density solid-state storage in a 48-TFSOP (48-TSOP I) package and operates from a single 2.7 V to 3.6 V supply.
Designed for electronic systems that require compact, high-capacity flash storage, this device is applicable where parallel NAND memory, standard commercial temperature operation, and a TSOP footprint are required.
Key Features
- Memory Core 256 Gbit capacity implemented as 32G × 8 organization using NAND flash (MLC) technology for high-density non-volatile storage.
- Interface Parallel memory interface for systems designed around parallel NAND bus architectures.
- Power Single-supply operation from 2.7 V to 3.6 V to support common system voltage rails.
- Package 48-TFSOP (0.724", 18.40 mm width) / 48-TSOP I supplier device package for board-level integration into compact PCBs.
- Operating Range Commercial temperature range of 0°C to 70°C (TA), matching typical ambient operating environments.
Typical Applications
- Embedded storage — Provides large-capacity non-volatile storage for embedded systems that require parallel NAND memory.
- Firmware and code storage — Stores firmware, boot code, or large lookup tables where 256 Gbit density is needed.
- Data storage modules — Suits board-level modules and assemblies that use TSOP footprint flash devices and parallel interfaces.
Unique Advantages
- High-density storage: 256 Gbit (32G × 8) capacity enables significant on-board data and code retention in a single device.
- Parallel interface compatibility: Parallel memory interface simplifies integration into legacy and parallel-bus based designs.
- Single-supply flexibility: 2.7 V to 3.6 V supply range accommodates common system power domains.
- Compact TSOP packaging: 48-TFSOP / 48-TSOP I package provides a standardized footprint for space-constrained PCB layouts.
- Commercial temperature support: Rated for 0°C to 70°C operation to match typical ambient operating conditions.
- MLC NAND technology: Multi-level cell architecture delivers the specified density in a single die solution.
Why Choose MT29F256G08CJAAAWP-Z:A?
The MT29F256G08CJAAAWP-Z:A combines 256 Gbit MLC NAND flash density with a parallel interface and a compact 48-TSOP I package, making it suited to designs that require substantial non-volatile storage in a standardized board-level form factor. Its 2.7 V–3.6 V supply range and commercial temperature rating support common system environments.
Manufactured by Micron Technology Inc., this device is appropriate for customers integrating high-capacity parallel NAND flash into embedded systems, firmware storage solutions, or storage modules where package footprint and voltage compatibility are key design constraints.
Request a quote or submit an inquiry for pricing and availability of MT29F256G08CJAAAWP-Z:A to begin procurement or for further technical information.
