MT29F256G08CJAAAWP-IT:A
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 170 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAAAWP-IT:A – 256 Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F256G08CJAAAWP-IT:A is a 256 Gbit non-volatile NAND flash memory device built on MLC flash technology and organized as 32G × 8. It provides parallel interface access and operates from a 2.7 V to 3.6 V supply.
Targeted for systems that require high-density parallel flash storage, this device combines large memory capacity with a compact 48‑TSOP I package and an industrial operating temperature range of -40°C to 85°C.
Key Features
- Memory Technology Multi-level cell (MLC) NAND flash providing non-volatile data storage.
- Capacity & Organization 256 Gbit total capacity organized as 32G × 8, enabling high-density storage.
- Interface Parallel memory interface for direct parallel access to flash arrays.
- Supply Voltage Operates from 2.7 V to 3.6 V, supporting typical system supply rails.
- Package 48‑TSOP I (48‑TFSOP, 0.724", 18.40 mm width) package suited for compact board layouts.
- Operating Temperature Industrial temperature range: -40°C to 85°C (TA) for use in temperature-demanding environments.
- Memory Format & Type FLASH format, non-volatile memory suitable for persistent data storage.
Typical Applications
- Embedded Storage Use as onboard non-volatile storage in embedded systems requiring 256 Gbit parallel NAND flash.
- Data Logging / Recording Suitable for applications that need high-capacity, persistent storage across industrial temperature ranges.
- Compact Board Designs The 48‑TSOP I package supports high-density memory integration in space-constrained PCBs.
Unique Advantages
- High-density 256 Gbit capacity: Provides substantial non-volatile storage in a single-device solution (32G × 8 organization).
- Parallel interface: Direct parallel access enables straightforward integration into systems designed for parallel flash.
- Wide supply range: 2.7 V to 3.6 V operation accommodates common system voltage rails.
- Industrial temperature rating: Rated for -40°C to 85°C to support temperature-demanding deployments.
- Compact TSOP package: 48‑TSOP I packaging (0.724", 18.40 mm width) helps minimize PCB footprint for high-capacity designs.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
The MT29F256G08CJAAAWP-IT:A positions itself as a high-density, parallel NAND flash option that combines 256 Gbit capacity with a compact 48‑TSOP I package and industrial temperature capability. Its 32G × 8 organization and 2.7 V–3.6 V supply compatibility make it suitable for engineers designing systems that require large, persistent storage with parallel access.
This device is appropriate for designs where board space, supply-voltage compatibility, and operation across -40°C to 85°C are important considerations, offering a straightforward integration path for high-capacity non-volatile memory needs.
Request a quote or contact sales to discuss availability, pricing, and to submit a purchase inquiry for the MT29F256G08CJAAAWP-IT:A.
