MT29F256G08CECEBJ4-37ITRES:E TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,702 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 4 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 267 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 0000.00.0000 |
Overview of MT29F256G08CECEBJ4-37ITRES:E TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08CECEBJ4-37ITRES:E TR is a 256 Gbit non-volatile NAND flash memory device implemented in MLC technology. It is organized as 32G × 8 and provides a parallel memory interface with a 267 MHz clock frequency.
Key device attributes include a 132-VBGA (12×18) package, a 2.7 V to 3.6 V supply range, and an operating temperature range of -40°C to 85°C, making it suitable for designs that require high-density parallel flash in a compact package.
Key Features
- Memory Architecture 256 Gbit capacity implemented as 32G × 8 organization using NAND flash MLC technology for non-volatile data storage.
- Interface & Performance Parallel memory interface with a 267 MHz clock frequency for synchronous parallel access.
- Power Operates from a 2.7 V to 3.6 V supply range to match common system power domains.
- Package 132-VBGA package (12×18 mm) providing a compact board footprint as specified by the supplier device package and package case.
- Temperature Range Specified operating temperature from -40°C to 85°C for extended-temperature applications.
- Memory Format & Type FLASH format, non-volatile memory suitable for persistent storage requirements.
Unique Advantages
- High-density storage: 256 Gbit capacity (32G × 8) enables large onboard data or code storage within a single device.
- Parallel interface integration: Parallel memory interface with 267 MHz clock frequency supports designs that require parallel-access flash memory.
- Flexible power range: 2.7 V to 3.6 V supply accommodates a range of system voltage rails.
- Compact BGA footprint: 132-VBGA (12×18) package provides a defined, compact physical form factor for PCB layout planning.
- Extended operating temperature: -40°C to 85°C rating supports deployment in temperature-stressed environments.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08CECEBJ4-37ITRES:E TR positions itself as a high-density parallel NAND flash solution combining 256 Gbit MLC storage with a 267 MHz parallel interface and a compact 132-VBGA package. Its voltage range (2.7 V–3.6 V) and -40°C to 85°C operating window make it appropriate for designs that require a large, non-volatile memory footprint within a constrained board area.
This device is suitable for customers and designs that need verified device-level characteristics—capacity, organization, interface type, package, voltage and temperature specifications—to drive system-level selection, BOM definition, and PCB footprinting decisions.
Request a quote or submit a pricing inquiry to obtain availability, lead-time, and ordering information for the MT29F256G08CECEBJ4-37ITRES:E TR.
