MT29F256G08CECCBH6-6R:C
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 717 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CECCBH6-6R:C – IC FLASH 256GBIT PAR 152VBGA
The MT29F256G08CECCBH6-6R:C is a 256 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements multi-level cell (MLC) NAND flash memory organized as 32G × 8 and is delivered in a 152-VBGA (14×18) package.
Designed for systems that require parallel flash storage, the device provides a parallel memory interface with a 167 MHz clock and operates from a 2.7 V to 3.6 V supply. Operating ambient temperature is specified as 0°C to 70°C (TA).
Key Features
- Memory Type & Organization Non-volatile FLASH NAND (MLC) memory organized as 32G × 8, providing 256 Gbit of capacity.
- Interface & Clock Parallel memory interface with a 167 MHz clock frequency for parallel flash system architectures.
- Supply Voltage Operates from 2.7 V to 3.6 V, supporting common 3.3 V system rails.
- Package 152-VBGA (14×18) supplier device package for surface-mount PCB assembly.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Form Factor FLASH memory format in a parallel interface configuration.
Unique Advantages
- Large storage density: 256 Gbit capacity (32G × 8) enables high-density data storage in a single device.
- Parallel interface support: Parallel memory interface with a defined 167 MHz clock simplifies integration into parallel-flash architectures.
- Flexible power range: 2.7 V–3.6 V supply range accommodates common system power rails.
- Compact VBGA packaging: 152-VBGA (14×18) package provides a compact surface-mount footprint for space-constrained designs.
- Commercial temperature range: 0°C–70°C operating specification suitable for standard commercial applications.
- Micron manufacturing: Produced by Micron Technology Inc., ensuring device traceability to a major memory manufacturer.
Why Choose MT29F256G08CECCBH6-6R:C?
The MT29F256G08CECCBH6-6R:C positions itself as a high-density parallel NAND flash option for designs that require 256 Gbit of non-volatile storage in a compact 152-VBGA package. Its 32G × 8 organization, 167 MHz clock, and 2.7 V–3.6 V supply range make it suitable for systems built around parallel flash memory interfaces within the specified commercial temperature range.
Manufactured by Micron Technology Inc., the device is appropriate for engineers and procurement teams specifying parallel NAND flash where capacity, standard voltage compatibility, and a compact VBGA package are key selection criteria.
Request a quote or contact sales to discuss availability, pricing, and to submit a purchase inquiry for the MT29F256G08CECCBH6-6R:C.
