MT29F256G08CECCBH6-6ITR:C

The MT29F256G08CECCBH6-6ITR:C is a 256 Gbit non-volatile NAND flash memory device organized as 32G × 8 and implemented with MLC NAND technology. It provides parallel memory interface access and is designed for systems that require high-density, non-volatile storage in a compact BGA footprint.

Key device attributes include a 167 MHz clock frequency, a 2.7 V to 3.6 V supply range, and an operating temperature range of -40°C to 85°C, supporting use in designs that require wide voltage and temperature tolerance.

Key Features

• Memory Core 
  256 Gbit capacity organized as 32G × 8 using NAND MLC technology for high-density non-volatile storage.
• Interface & Performance 
  Parallel memory interface with a clock frequency specified at 167 MHz for synchronous access patterns.
• Power 
  Operates from a 2.7 V to 3.6 V supply range, allowing integration with common 3 V system rails.
• Temperature Range 
  Specified operating temperature range of -40°C to 85°C for a broad range of ambient conditions.
• Package & Form Factor 
  152-VBGA package (14 × 18 mm), offering a compact ball-grid array footprint for surface-mount designs.
• Memory Format 
  Parallel flash memory format suitable for systems requiring parallel bus access to NAND storage.

Typical Applications

• Embedded storage 
  Integration into systems that require large non-volatile capacity using a parallel NAND interface and compact BGA packaging.
• Industrial equipment 
  Use in equipment that operates across -40°C to 85°C where wide temperature tolerance is required for reliable data retention.
• High-density data storage modules 
  Assembly into storage subsystems that leverage 256 Gbit NAND MLC organization for increased capacity per package.
• 3 V system designs 
  Applications powered from 2.7 V to 3.6 V rails that need parallel flash memory in a small form factor.

Unique Advantages

• High storage density: 256 Gbit capacity (32G × 8) provides significant non-volatile storage in a single device, reducing board-level component count.
• Compact BGA package: 152-VBGA (14 × 18 mm) footprint enables space-efficient surface-mount implementation for area-constrained designs.
• Wide voltage compatibility: 2.7 V to 3.6 V supply range simplifies integration with common 3 V power domains.
• Broad operating temperature: Specified -40°C to 85°C operation supports deployment across a range of environmental conditions.
• Parallel interface with defined clock: Parallel memory access at a 167 MHz clock frequency supports synchronous system architectures that use parallel flash.

Why Choose MT29F256G08CECCBH6-6ITR:C?

The MT29F256G08CECCBH6-6ITR:C positions itself as a high-density, parallel NAND flash option that combines 256 Gbit capacity with MLC technology in a compact 152-VBGA package. Its specified 2.7 V–3.6 V supply range, 167 MHz clock, and -40°C to 85°C operating range make it suitable for designs that require a balance of capacity, compact packaging, and tolerance to common industrial temperature and power conditions.

This device is appropriate for engineers and procurement teams building systems that need substantial non-volatile storage in a BGA form factor with defined electrical and thermal specifications.

Request a quote or submit an inquiry to our sales team for pricing, lead times, and availability of the MT29F256G08CECCBH6-6ITR:C.