MT29F256G08CECABH6-6R:A

The MT29F256G08CECABH6-6R:A is a 256 Gbit non-volatile FLASH memory device using NAND MLC technology organized as 32G × 8. It provides parallel memory access with a specified clock frequency of 166 MHz for systems that require high-density parallel NAND storage.

Packaged in a 152‑VBGA (14×18) footprint and operating from a 2.7 V to 3.6 V supply, this device targets designs that need compact, high-capacity parallel FLASH memory within an ambient operating range of 0 °C to 70 °C.

Key Features

• Memory Type & Capacity Non-volatile FLASH NAND (MLC) technology with a total capacity of 256 Gbit organized as 32G × 8.
• Interface & Performance Parallel memory interface with a clock frequency specified at 166 MHz for synchronous parallel operation.
• Voltage Supply Operates from a 2.7 V to 3.6 V supply range to accommodate common system power rails.
• Package 152‑VBGA package (14×18 mm) for compact board-level integration.
• Operating Temperature Specified ambient operating range of 0 °C to 70 °C (TA).
• Memory Format & Organization NAND FLASH memory format with an organization of 32G × 8 suitable for high-density storage implementations.

Typical Applications

• Embedded storage systems Provides 256 Gbit non-volatile storage for embedded platforms requiring parallel NAND flash.
• Storage modules and controllers Used where a parallel MLC NAND device in a 152‑VBGA package is needed for board-level storage solutions.
• Consumer and industrial equipment Suitable for devices operating within the 0 °C to 70 °C ambient range that require compact, high-density FLASH memory.

Unique Advantages

• High density in a single device: 256 Gbit capacity in a single NAND MLC device simplifies design choices for large storage needs.
• Parallel interface with defined clock: Parallel access with a 166 MHz clock allows integration with systems designed for parallel FLASH operation.
• Standard supply voltage range: 2.7 V to 3.6 V compatibility aligns with common system power rails.
• Compact VBGA package: 152‑VBGA (14×18) package enables high-density board integration where board space is a consideration.
• Defined operating temperature range: Rated for 0 °C to 70 °C ambient operation to match typical commercial-temperature applications.

Why Choose MT29F256G08CECABH6-6R:A?

The MT29F256G08CECABH6-6R:A positions itself as a high-capacity parallel NAND MLC FLASH device in a compact 152‑VBGA package, offering straightforward integration for designs that require 256 Gbit of non-volatile memory. With a 166 MHz clock specification and a 2.7 V to 3.6 V supply range, it fits systems that use parallel FLASH interfaces and standard power rails.

This device is suitable for engineers and procurement teams specifying high-density parallel NAND memory for commercial-temperature applications where package footprint and raw storage capacity are primary considerations. Sourcing this Micron Technology Inc. FLASH part provides a clear specification set for board-level integration and system design.

To request a quote or to discuss availability and pricing for the MT29F256G08CECABH6-6R:A, please contact sales or submit a quotation request through your preferred procurement channel.