MT29F256G08CECBBH6-6ITR:B
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 270 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CECBBH6-6ITR:B – IC FLASH 256GBIT PAR 152VBGA
The MT29F256G08CECBBH6-6ITR:B is a 256 Gbit non-volatile NAND flash memory device using MLC technology in a parallel interface configuration. It is provided in a 152-VBGA (14×18) package and supports a supply voltage range of 2.7 V to 3.6 V with an operating clock frequency of 167 MHz.
Designed for systems that require high-capacity parallel NAND flash in a compact BGA footprint, the device operates across an ambient temperature range of -40°C to 85°C, offering a combination of density, form factor, and electrical flexibility for embedded memory applications.
Key Features
- Memory Core and Organization 256 Gbit FLASH NAND (MLC) memory organized as 32G × 8.
- Interface and Performance Parallel memory interface with a specified clock frequency of 167 MHz.
- Voltage Supply Operates from 2.7 V to 3.6 V, accommodating common system rails.
- Package 152‑VBGA package, supplier device package listed as 152‑VBGA (14×18).
- Operating Temperature Rated for -40°C to 85°C (TA) operation.
- Non‑Volatile Memory FLASH memory providing persistent data storage without power.
Unique Advantages
- High-density storage: 256 Gbit capacity supports large data and code storage requirements within a single device.
- Compact BGA footprint: 152‑VBGA (14×18) package reduces board area while delivering high capacity.
- Parallel interface flexibility: Parallel memory interface and 167 MHz clock enable integration into systems designed for parallel NAND memory access.
- Wide operating range: -40°C to 85°C ambient rating supports a broad set of environmental conditions.
- Standard supply voltage: 2.7 V–3.6 V operation aligns with common system power rails for ease of integration.
- MLC NAND technology: Multi-level cell architecture provides increased storage density per die.
Why Choose MT29F256G08CECBBH6-6ITR:B?
The MT29F256G08CECBBH6-6ITR:B delivers a high-capacity, non-volatile NAND flash solution in a compact 152‑VBGA package with a parallel interface and a 167 MHz clock specification. Its 2.7 V–3.6 V supply range and -40°C to 85°C ambient rating make it suitable for designs that require substantial on-board storage with defined electrical and thermal limits.
This device is appropriate for designers and systems that need a large, parallel-access MLC flash memory in a space-efficient BGA package, offering a clear specification set for capacity, interface, supply voltage, clocking, and operating temperature.
Request a quote or submit a pricing and availability inquiry to receive detailed purchasing information and lead-time options for the MT29F256G08CECBBH6-6ITR:B.
