MT29F256G08CECABH6-6:A

IC FLASH 256GBIT PAR 152VBGA
Part Description

IC FLASH 256GBIT PAR 152VBGA

Quantity 630 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-VBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency166 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging152-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CECABH6-6:A – IC FLASH 256GBIT PAR 152VBGA

The MT29F256G08CECABH6-6:A is a 256 Gbit, parallel NAND flash memory device implemented in MLC (multi-level cell) FLASH technology. It is organized as 32G × 8 and operates with a clock frequency of 166 MHz, providing high-capacity non-volatile storage in a compact VBGA package.

This device targets designs that require large-density parallel flash storage with standard 2.7 V to 3.6 V supply compatibility and a 152-VBGA (14×18) package footprint. Operating ambient range is specified from 0°C to 70°C.

Key Features

  • Memory Technology  FLASH - NAND (MLC) non-volatile memory optimized for high-density storage applications.
  • Density & Organization  256 Gbit total capacity organized as 32G × 8 to simplify system addressing and memory mapping.
  • Interface & Performance  Parallel memory interface with a specified clock frequency of 166 MHz for synchronous operation with parallel host controllers.
  • Voltage Supply  Operates from 2.7 V to 3.6 V, enabling compatibility with common system power rails.
  • Package  152-VBGA package (14×18 mm) providing a compact, ball-grid array footprint for board-level integration.
  • Operating Temperature  Rated for ambient operation from 0°C to 70°C.

Typical Applications

  • High-capacity storage systems  Used where large non-volatile parallel FLASH capacity is required for data storage or content distribution.
  • Embedded storage  Suitable for embedded systems that require MLC NAND for firmware, filesystem, or bulk data retention.
  • Data logging and archival  Applicable in designs that need sustained non-volatile capacity within the specified temperature and voltage ranges.

Unique Advantages

  • High-density capacity: 256 Gbit total provides substantial non-volatile storage in a single device, reducing the need for multiple components.
  • Parallel interface support: Parallel memory interface enables integration with legacy or parallel-host controllers without serial-to-parallel translation.
  • Industry-standard supply range: 2.7 V to 3.6 V operation matches common system power rails for straightforward power design.
  • Compact VBGA footprint: 152-VBGA (14×18) package offers high-density integration for space-constrained PCBs.
  • Defined operating range: Specified 0°C to 70°C ambient temperature rating helps align component selection with typical commercial-temperature designs.

Why Choose MT29F256G08CECABH6-6:A?

The MT29F256G08CECABH6-6:A positions itself as a high-density, parallel NAND flash option for designs requiring 256 Gbit of MLC storage in a compact VBGA package. Its parallel interface, 166 MHz clock rating, and standard 2.7 V–3.6 V supply range make it suitable for systems that need substantial non-volatile capacity with straightforward electrical integration.

Choose this device for applications where consolidation of storage into a single package, predictable operating limits (0°C to 70°C), and a compact 152-VBGA footprint are priorities for design simplicity and board-space efficiency.

Request a quote or submit an inquiry to our sales team for pricing, lead time, and availability information for the MT29F256G08CECABH6-6:A.

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