MT29F256G08CBCBBWP-10M:B
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,269 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F256G08CBCBBWP-10M:B – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CBCBBWP-10M:B is a 256 Gbit non-volatile NAND flash memory device implemented with MLC (multi-level cell) technology and organized as 32G × 8. It provides a parallel memory interface and is supplied in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) package.
This device is intended for systems that require high-density parallel flash storage within the provided supply voltage range of 2.7 V to 3.6 V and an ambient operating range of 0°C to 70°C (TA). Its architecture and organization make it suitable for designs needing large-capacity, non-volatile FLASH memory with a parallel interface.
Key Features
- Memory Type & Technology Non-volatile NAND FLASH using MLC technology for multi-bit storage per cell.
- Density & Organization 256 Gbit capacity organized as 32G × 8, providing large storage capacity in a single device.
- Interface Parallel memory interface for direct byte-wide connections to host controllers.
- Clock Frequency Rated clock frequency of 100 MHz for timing reference in supported system designs.
- Supply Voltage Operates from 2.7 V to 3.6 V, compatible with common 3 V system rails.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) surface-mount package suitable for board-level integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA) for target thermal environments.
Typical Applications
- Embedded storage systems Provides high-density non-volatile FLASH storage where parallel NAND is required for system firmware or large-data storage.
- Consumer electronics Suitable for products that require significant onboard Flash capacity within a TSOP package footprint.
- Industrial equipment Can be used in control and data-logging systems operating within the 0°C to 70°C ambient range that use parallel flash interfaces.
Unique Advantages
- High storage capacity: 256 Gbit density enables consolidation of large data or firmware sets into a single device.
- Parallel interface flexibility: Byte-wide parallel organization (32G × 8) supports direct connection to parallel memory controllers and legacy interfaces.
- Standard supply voltage: 2.7 V to 3.6 V supply range aligns with typical 3 V system rails for straightforward power integration.
- Compact TSOP package: 48-TSOP I package (0.724", 18.40 mm width) provides a compact SMD form factor for board-level mounting.
- MLC NAND technology: Multi-level cell implementation increases usable capacity per silicon area compared to single-level cell approaches.
Why Choose MT29F256G08CBCBBWP-10M:B?
The MT29F256G08CBCBBWP-10M:B positions itself as a high-density parallel NAND FLASH device offering 256 Gbit capacity in a compact 48-TSOP I package. Its MLC NAND architecture and 32G × 8 organization make it suitable for designs that require large non-volatile storage with a parallel interface and standard 3 V-class power rails.
This device is a fit for engineers and procurement teams specifying high-capacity FLASH for embedded, consumer, or industrial designs that operate within a 0°C to 70°C ambient range and use parallel memory connectivity. Its combination of capacity, package, and voltage compatibility supports integration into systems where consolidation of storage and board-level form factor are priorities.
Request a quote or contact the sales team to discuss availability, pricing, and lead times for the MT29F256G08CBCBBWP-10M:B. Submitting a quote request will help you get detailed procurement information tailored to your project needs.
