MT29F256G08CBCBBL06B3WC1
| Part Description |
IC FLASH 256GBIT PARALLEL DIE |
|---|---|
| Quantity | 919 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CBCBBL06B3WC1 – IC FLASH 256GBIT PARALLEL DIE
The MT29F256G08CBCBBL06B3WC1 is a 256 Gbit non-volatile flash memory implemented as parallel NAND MLC and supplied in die form. It provides a 32G x 8 memory organization and a parallel memory interface for direct integration into designs requiring on‑board NAND flash storage.
Key electrical and environmental parameters include a supply voltage range of 2.7 V to 3.6 V and an operating temperature range of 0 °C to 70 °C, enabling use in standard commercial-temperature electronic products.
Key Features
- Technology – FLASH NAND (MLC) Multi-level cell (MLC) NAND flash technology as specified in the product data.
- Memory Organization & Size Organized as 32G × 8 with a total memory capacity of 256 Gbit.
- Interface Parallel memory interface suitable for direct die-level integration into host designs.
- Voltage Supply Operates from 2.7 V to 3.6 V, matching common system power rails.
- Operating Temperature Rated for 0 °C to 70 °C (TA) for commercial-temperature applications.
- Package Supplied as a die for integration into custom packaging or multi-die assemblies.
- Non-Volatile Memory Retains stored data without power, as a flash memory device.
Unique Advantages
- High-capacity storage: 256 Gbit capacity enables large data or code storage in a single die.
- Die-level integration: Supplied as a die to support custom packaging, multi-die stacks, or direct die-bond processes.
- Standard supply voltage: 2.7 V–3.6 V operation simplifies integration with common system power rails.
- Parallel interface: Parallel memory interface supports direct connection in systems designed for parallel NAND operation.
- Commercial temperature rating: 0 °C–70 °C operation aligns with typical commercial electronics deployment environments.
Why Choose MT29F256G08CBCBBL06B3WC1?
The MT29F256G08CBCBBL06B3WC1 provides a high-density, parallel NAND MLC flash solution delivered as a die for flexible integration into custom assemblies. Its combination of 256 Gbit capacity, 32G × 8 organization, and standard 2.7 V–3.6 V supply voltage makes it suitable for designs that require substantial non-volatile storage at the die level.
This part is appropriate for engineering teams and procurement focused on die-based memory integration within commercial-temperature products, offering capacity and electrical characteristics that support scalable, die-level storage implementations.
Request a quote or contact sales to discuss availability, lead times and integration options for MT29F256G08CBCBBL06B3WC1.
