MT29F256G08CBCBBJ4-5M:B TR

The MT29F256G08CBCBBJ4-5M:B TR is a 256 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements MLC NAND flash organized as 32G × 8 and provides parallel memory interface operation.

Designed for systems that require high-density parallel flash storage, the device offers a 200 MHz clock interface, a 2.7 V to 3.6 V supply range, and a 132-VBGA (12 × 18 mm) package for board-level integration.

Key Features

• Memory Type & Technology 256 Gbit non-volatile memory based on NAND FLASH (MLC) technology.
• Density & Organization Organized as 32G × 8 to provide the full 256 Gbit capacity in a parallel memory format.
• Interface & Performance Parallel memory interface with a 200 MHz clock specification for system timing and data transfer.
• Voltage Operates from a 2.7 V to 3.6 V supply range, compatible with common system power rails.
• Package Supplied in a 132-VBGA package (12 × 18 mm) suitable for compact board-level implementations.
• Operating Temperature Specified for operation from 0°C to 70°C (TA), matching standard ambient commercial temperature ranges.

Typical Applications

• Embedded storage — Provides high-capacity non-volatile storage for embedded systems that utilize parallel NAND interfaces.
• Consumer electronics — Used in devices requiring large flash capacity in a compact VBGA package and standard commercial temperature operation.
• Data logging and archival — Suitable for systems that need persistent storage with a defined supply voltage range and parallel access.
• Networking and communication equipment — Supports designs where parallel flash memory is required for firmware or large-scale data storage.

Unique Advantages

• High-density capacity: 256 Gbit of NAND flash enables significant on-board non-volatile storage without external modules.
• Parallel interface flexibility: 32G × 8 organization and parallel memory interface simplify integration into systems designed for parallel flash access.
• Compact VBGA package: 132-VBGA (12 × 18 mm) package reduces board footprint while accommodating high capacity.
• Standard supply voltage: 2.7 V to 3.6 V operation aligns with common system power rails for straightforward power integration.
• Commercial temperature range: Rated for 0°C to 70°C ambient operation to match typical commercial deployments.

Why Choose MT29F256G08CBCBBJ4-5M:B TR?

The MT29F256G08CBCBBJ4-5M:B TR positions itself as a high-capacity parallel NAND flash option for designs that require a 256 Gbit non-volatile memory in a compact 132-VBGA package. Its MLC NAND architecture, 32G × 8 organization, and 200 MHz clocking make it suitable for systems built around parallel flash interfaces and standard 2.7 V–3.6 V power rails.

This device is suited to engineers and procurement teams targeting embedded storage solutions, consumer electronics, and other applications that demand large on-board flash capacity within commercial temperature operation. Its combination of capacity, package, and electrical specifications supports scalable integration into board-level storage designs.

Request a quote or contact sales to discuss availability, pricing, and how the MT29F256G08CBCBBJ4-5M:B TR can meet your project requirements.