MT29F256G08AUCDBJ6-6IT:D TR
| Part Description |
IC FLASH 256GBIT PAR 132LBGA |
|---|---|
| Quantity | 454 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCDBJ6-6IT:D TR – IC FLASH 256GBIT PAR 132LBGA
The MT29F256G08AUCDBJ6-6IT:D TR from Micron Technology Inc. is a 256 Gbit non-volatile NAND flash memory device provided in a 132-ball L‑BGA package. The device implements FLASH - NAND (SLC) technology with a memory organization of 32G × 8 and a parallel memory interface.
Key electrical and environmental parameters include a specified clock frequency of 167 MHz, a supply voltage range of 2.7 V to 3.6 V, and an ambient operating temperature range of -40°C to 85°C. The package is specified as 132-LBGA (12×18).
Key Features
- Memory Technology FLASH - NAND (SLC) technology as specified for single-level cell operation.
- Capacity & Organization 256 Gbit total capacity organized as 32G × 8.
- Interface & Performance Parallel memory interface with a specified clock frequency of 167 MHz.
- Power Supply Wide supply voltage range of 2.7 V to 3.6 V to match common system rails.
- Operating Temperature Ambient operating range from -40°C to 85°C.
- Package 132-LBGA package in a 12×18 footprint for compact board-level integration.
- Memory Format Non-volatile flash memory with a 256 Gbit capacity.
Unique Advantages
- High-density storage Provides 256 Gbit of non-volatile storage in a single device, supporting high-capacity memory requirements.
- SLC NAND technology Specified as FLASH - NAND (SLC), matching single-level cell flash implementations.
- Parallel interface option Parallel memory interface with a defined 167 MHz clock frequency for designs using parallel flash connectivity.
- Broad supply compatibility Operates across a 2.7 V to 3.6 V supply range to align with common system voltages.
- Extended ambient range Specified for operation from -40°C to 85°C to support extended-temperature applications.
- Compact LBGA packaging 132-LBGA (12×18) package provides a compact footprint for board-level density.
Why Choose MT29F256G08AUCDBJ6-6IT:D TR?
The MT29F256G08AUCDBJ6-6IT:D TR is positioned as a high-capacity, parallel-interface SLC NAND flash device suitable for designs that require 256 Gbit of non-volatile memory in a compact 132-LBGA package. Its specified electrical and environmental parameters—167 MHz clock, 2.7 V–3.6 V supply, and -40°C to 85°C operating range—allow straightforward integration into systems that match these requirements.
This device is appropriate for engineers and procurement teams seeking a defined set of memory specifications from a recognized manufacturer, Micron Technology Inc., where compact packaging, supply-range compatibility, and SLC NAND technology are priorities.
If you need pricing, lead-time, or to request a formal quote for MT29F256G08AUCDBJ6-6IT:D TR, please request a quote or contact sales to discuss availability and options.
