MT29F256G08AUCDBJ6-6IT:D
| Part Description |
IC FLASH 256GBIT PAR 132LBGA |
|---|---|
| Quantity | 1,136 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCDBJ6-6IT:D – IC FLASH 256GBIT PAR 132LBGA
The MT29F256G08AUCDBJ6-6IT:D is a 256 Gbit non-volatile NAND flash memory device implementing SLC technology with a parallel memory interface. It is organized as 32G × 8 and operates from a 2.7 V to 3.6 V supply.
Designed for systems that require parallel NAND flash storage, this device combines high density with a 132-LBGA (12×18) package and an operating temperature range of −40°C to 85°C to address applications that need large non-volatile memory in a compact form factor.
Key Features
- Memory Type & Technology Non-volatile FLASH – NAND (SLC) technology providing single-level cell storage for predictable data retention characteristics.
- Capacity & Organization 256 Gbit capacity organized as 32G × 8 to support high-density storage requirements.
- Interface Parallel memory interface for direct parallel access to device memory.
- Clock 167 MHz clock frequency specified for timing reference.
- Voltage Supply Operates from 2.7 V to 3.6 V to accommodate common system power rails.
- Package 132-LBGA package in a 12×18 form factor for compact board integration.
- Temperature Range Rated for operation from −40°C to 85°C (TA) to support extended temperature environments.
Typical Applications
- Parallel flash storage systems — For designs that require a high-density parallel NAND flash device with 32G × 8 organization.
- Embedded non-volatile memory — Suitable where 256 Gbit of SLC NAND is required for firmware, data, or image storage with a parallel interface.
- Rugged or wide-temperature systems — Applicable to equipment operating across −40°C to 85°C that require compact LBGA packaging.
Unique Advantages
- Large 256 Gbit capacity: Provides substantial non-volatile storage in a single device to reduce BOM count for high-capacity requirements.
- SLC NAND technology: Single-level cell architecture as specified supports predictable storage characteristics for data retention.
- Parallel interface: Enables direct parallel access to device memory for designs that use parallel bus architectures.
- Wide supply range: 2.7 V to 3.6 V operation offers flexibility with common system power rails.
- Compact LBGA package: 132-LBGA (12×18) package allows integration in space-constrained board layouts.
- Extended temperature rating: −40°C to 85°C operation meets needs for systems exposed to a broad temperature range.
Why Choose IC FLASH 256GBIT PAR 132LBGA?
The MT29F256G08AUCDBJ6-6IT:D delivers a high-density, parallel-interface SLC NAND flash option in a compact 132-LBGA package while operating over a wide voltage and temperature range. Its 32G × 8 organization and 256 Gbit capacity make it suitable for designs that require substantial non-volatile memory without multiple devices.
This device is appropriate for engineers and procurement teams specifying parallel NAND flash where package density, supply flexibility (2.7 V–3.6 V), and a −40°C to 85°C operating window are key selection criteria.
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