MT29F256G08AUCABJ3-10Z:A

IC FLASH 256GBIT PAR 132LBGA
Part Description

IC FLASH 256GBIT PAR 132LBGA

Quantity 1,487 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package132-LBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency100 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08AUCABJ3-10Z:A – IC FLASH 256GBIT PAR 132LBGA

The MT29F256G08AUCABJ3-10Z:A is a 256 Gbit parallel NAND flash device from Micron Technology Inc., implemented with single-level cell (SLC) technology. It provides high-capacity, non-volatile storage in a 132-ball BGA (12×18) package for commercial-temperature embedded systems.

This device supports both synchronous and asynchronous I/O with ONFI 2.2 compliance and a range of advanced NAND commands, making it suitable for applications that require durable, high-throughput local storage and firmware/boot media in commercial equipment.

Key Features

  • Memory Type & Capacity  Non-volatile SLC NAND flash with a memory size of 256 Gbit organized as 32G × 8.
  • Organization & Geometry  Page size x8: 8,640 bytes (8,192 + 448); block size: 128 pages (1,024K + 56K bytes); plane size: 2 planes × 2,048 blocks per plane; 256Gb device = 32,768 blocks.
  • Interface & Protocol  Parallel memory interface with ONFI 2.2 compliance. Supports synchronous and asynchronous signaling and hardware data strobe (DQS) for synchronized data transfer.
  • Performance  Synchronous I/O up to timing mode 5 with DDR clock rate of 10 ns (read/write throughput per pin up to 200 MT/s). Asynchronous I/O up to timing mode 5 (read/write throughput per pin up to 50 MT/s). Typical array timings: read page 35 µs, program page 350 µs, erase block 1.5 ms.
  • Voltage  VCC operating range: 2.7 V to 3.6 V. VCCQ options: 1.7–1.95 V or 2.7–3.6 V.
  • Reliability & Endurance  Endurance rated at 60,000 program/erase cycles. Data retention is JESD47G compliant. Operation status byte provides software indications for operation completion, pass/fail, and write-protect status.
  • Advanced Command Set  Support for program cache, read cache (sequential and random), multi-plane and multi-LUN commands, OTP mode, read unique ID, and copyback. RESET (FFh) is required as first command after power-on.
  • Package & Temperature  Supplier device package: 132-LBGA (12×18). Specified operating temperature (TA): 0°C to +70°C.

Typical Applications

  • Commercial Embedded Systems  High-capacity non-volatile storage for embedded applications operating in commercial temperature ranges.
  • Firmware and Boot Storage  Reliable SLC storage for firmware images, boot code, and system recovery partitions where endurance and data retention are required.
  • Data Logging and Local Media  Local high-capacity storage for data buffering or logging in commercial devices that require frequent program/erase cycles and predictable performance.
  • Consumer and Networking Devices  Onboard non-volatile memory for consumer electronics and networking equipment that leverage parallel NAND performance and capacity.

Unique Advantages

  • High Capacity in a Compact BGA  256 Gbit in a 132-ball BGA (12×18) footprint enables dense storage with a small board area impact.
  • SLC Endurance  60,000 program/erase cycles provide longevity for applications with frequent write/erase activity.
  • Flexible Performance Modes  Support for synchronous DDR transfers (up to 200 MT/s per pin) and asynchronous modes allows designers to balance throughput and timing complexity.
  • ONFI 2.2 Compliance  Standardized interface and DQS support simplify integration with controllers that support ONFI-compliant NAND devices.
  • Comprehensive Command Feature Set  Program/read caches, multi-plane and multi-LUN operations, OTP mode, and copyback operations enable optimized flash management and system-level performance strategies.
  • Robust Data Retention  JESD47G-compliant data retention helps meet reliability expectations for commercial applications.

Why Choose MT29F256G08AUCABJ3-10Z:A?

The MT29F256G08AUCABJ3-10Z:A positions itself as a high-capacity, high-endurance SLC NAND solution for commercial embedded designs that require reliable non-volatile storage with flexible performance modes. Its ONFI 2.2-compliant parallel interface, advanced command set, and documented array timings provide predictable integration and system-level behavior.

This Micron device is suited to designers who need scalable storage capacity, standardized interfaces, and endurance characteristics for firmware, boot, and local data storage in commercial-temperature equipment. The combination of SLC endurance, JESD47G data retention compliance, and a compact 132-LBGA package supports durable, long-life deployments where component-level reliability matters.

Request a quote or contact sales to discuss availability, lead times, and how this part fits your commercial embedded storage requirements.

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