MT29F256G08AUCABH3-10ITZ:A TR
| Part Description |
IC FLASH 256GBIT PAR 100LBGA |
|---|---|
| Quantity | 211 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABH3-10ITZ:A TR – IC FLASH 256GBIT PAR 100LBGA
The MT29F256G08AUCABH3-10ITZ:A TR is a 256 Gbit non-volatile NAND flash memory device provided by Micron Technology Inc. It implements SLC NAND flash architecture in a parallel memory format designed for high-density storage.
Key hardware attributes include a 32G × 8 organization, support for a 100 MHz clock, a 2.7 V–3.6 V supply range, and a compact 100-LBGA (12 × 18 mm) package with an ambient operating range of −40°C to 85°C.
Key Features
- Memory Core 256 Gbit non-volatile memory using FLASH - NAND (SLC) technology for single-level cell storage.
- Organization Configured as 32G × 8 to provide the stated 256 Gbit capacity.
- Interface & Timing Parallel memory interface with a clock frequency rating of 100 MHz for synchronous operation.
- Power Wide supply voltage range of 2.7 V to 3.6 V to support common system power rails.
- Package Supplied in a 100-LBGA package (12 × 18 mm) for compact board-level integration.
- Temperature Range Rated for operation from −40°C to 85°C (TA) for temperature-sensitive applications.
Typical Applications
- High-density storage systems Provides 256 Gbit of non-volatile storage for designs that require large onboard flash capacity.
- Embedded systems with parallel interfaces Used in devices that utilize parallel NAND flash connections for system firmware or data storage.
- Industrial equipment The −40°C to 85°C operating range supports deployment in temperature-challenging environments.
Unique Advantages
- Large on-chip capacity: 256 Gbit density delivers substantial non-volatile storage in a single device, reducing the need for multiple memory components.
- Parallel interface support: Parallel memory interface and 100 MHz clock frequency enable straightforward integration into parallel-memory architectures.
- Flexible power operation: 2.7 V–3.6 V supply compatibility aligns with common system power rails for simpler power management.
- Compact package: 100-LBGA (12 × 18 mm) supplier device package provides a space-efficient footprint for board-level integration.
- Wide operating temperature: Rated −40°C to 85°C to meet a range of ambient operating conditions.
Why Choose IC FLASH 256GBIT PAR 100LBGA?
The IC FLASH 256GBIT PAR 100LBGA delivers high-density SLC NAND flash capacity in a compact 100-LBGA footprint, suitable for designs that require large amounts of non-volatile storage with parallel interfacing. Its 32G × 8 organization, 100 MHz clock rating, and 2.7 V–3.6 V supply range support integration into systems with common power and timing requirements.
Manufactured by Micron Technology Inc., this device is positioned for engineers and procurement teams seeking a robust memory option that combines capacity, a parallel interface, and an industrial-grade operating temperature range.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29F256G08AUCABH3-10ITZ:A TR.
