MT29F256G08AUCABH3-10:A
| Part Description |
IC FLASH 256GBIT PAR 100LBGA |
|---|---|
| Quantity | 25 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABH3-10:A – IC FLASH 256Gbit Parallel, 100-LBGA
The MT29F256G08AUCABH3-10:A is a 256 Gbit non-volatile FLASH memory device implemented as NAND SLC with a parallel interface. It provides a 32G × 8 organization and operates from a 2.7 V to 3.6 V supply.
This device targets designs that require high-density parallel flash memory in a compact 100‑LBGA (12x18) package and supports a 100 MHz clock for parallel access.
Key Features
- Memory Type and Technology Non-volatile FLASH – NAND (SLC) technology providing single-level cell storage for the 256 Gbit device.
- Capacity & Organization 256 Gbit total capacity arranged as 32G × 8, enabling byte-wide parallel data access.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz for synchronous parallel operation.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting standard 3.3 V system rails.
- Package 100‑LBGA package, supplier device package listed as 100‑LBGA (12x18), suitable for board-level integration where compact BGA mounting is required.
- Operating Temperature Specified operating ambient temperature range of 0°C to 70°C (TA) for commercial temperature environments.
Typical Applications
- Embedded Storage Parallel NAND flash for embedded systems requiring large non-volatile memory arrays in a compact BGA footprint.
- Consumer Electronics Use where 256 Gbit parallel flash is needed within a standard commercial temperature range and 3.3 V system environments.
- Industrial Control High-density non-volatile storage in control or instrumentation devices operating in 0°C to 70°C ambient conditions.
Unique Advantages
- High-density storage: 256 Gbit capacity provides a large memory footprint in a single device, reducing board-level component count.
- Byte-wide organization: 32G × 8 organization supports straightforward parallel data access patterns for legacy and parallel-memory designs.
- Standard supply voltage: 2.7 V to 3.6 V operation aligns with common 3.3 V system rails for easier integration.
- Compact BGA package: 100‑LBGA (12x18) package minimizes PCB area while providing a solderable BGA form factor.
- Defined commercial temperature range: Rated for 0°C to 70°C operation to meet typical commercial environment requirements.
Why Choose IC FLASH 256GBIT PAR 100LBGA?
The MT29F256G08AUCABH3-10:A delivers a high-capacity, parallel SLC NAND flash solution packaged in a compact 100‑LBGA (12x18) footprint. Its 32G × 8 organization, 100 MHz clocking for parallel access, and 2.7 V–3.6 V supply range make it suitable for designs that need large non-volatile memory in a byte-wide parallel format within a commercial temperature range.
This device is appropriate for engineers and procurement teams specifying high-density parallel flash for embedded, consumer, or industrial control systems where package size, voltage compatibility, and a defined operating temperature are key selection criteria.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT29F256G08AUCABH3-10:A.
