MT29F256G08AUCABH3-10IT:A
| Part Description |
IC FLASH 256GBIT PAR 100LBGA |
|---|---|
| Quantity | 871 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABH3-10IT:A – IC FLASH 256GBIT PAR 100LBGA
The MT29F256G08AUCABH3-10IT:A is a 256 Gbit non-volatile NAND flash memory organized as 32G × 8, implemented in SLC NAND flash technology. It provides parallel memory interface operation up to a 100 MHz clock frequency and is supplied in a 100-LBGA (12×18) package.
This device targets systems that require high-density parallel flash storage with a 2.7 V to 3.6 V supply range and an operating temperature range of −40 °C to 85 °C, where a compact BGA package and defined electrical interfaces are required.
Key Features
- Memory Architecture 256 Gbit capacity organized as 32G × 8, implemented using FLASH - NAND (SLC) technology for non-volatile storage.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz for synchronous operation with parallel host controllers.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3 V system rails.
- Package Supplied in a 100-LBGA package (12×18 mm), enabling compact board integration with BGA assembly processes.
- Environmental Range Rated for an ambient operating temperature range of −40 °C to 85 °C (TA), suitable for extended temperature designs.
- Memory Format & Organization FLASH memory format with a byte-wide (×8) organization simplifying parallel data access and memory mapping.
Typical Applications
- High-Capacity Non-Volatile Storage Use where 256 Gbit of FLASH NAND is required for program or data retention in systems with parallel memory interfaces.
- Embedded Systems Suitable for embedded designs that require a compact 100-LBGA package and a 2.7 V–3.6 V supply range.
- Industrial Equipment Applicable to equipment operating within −40 °C to 85 °C that needs dense non-volatile storage in a BGA footprint.
Unique Advantages
- High Density Storage: 256 Gbit capacity (32G × 8) enables large data or code storage in a single device, reducing board-level part count.
- Parallel Interface Simplicity: Byte-wide parallel interface at up to 100 MHz allows straightforward connection to parallel memory controllers and simple data bus integration.
- Wide Supply Voltage: 2.7 V to 3.6 V operation supports common 3 V systems and provides flexibility across different power domains.
- Compact BGA Packaging: 100-LBGA (12×18) package delivers a dense footprint for space-constrained PCBs while maintaining a standardized assembly form factor.
- Extended Operating Temperature: −40 °C to 85 °C rating supports deployment in environments with varying thermal conditions.
Why Choose IC FLASH 256GBIT PAR 100LBGA?
The MT29F256G08AUCABH3-10IT:A positions itself as a high-density, parallel-access SLC NAND flash device focused on compact integration and defined electrical characteristics. Its 256 Gbit capacity, parallel interface at 100 MHz, and 100-LBGA package make it suitable for designs that require large non-volatile storage in a small form factor.
Designers and procurement teams seeking a stable flash memory option with a 2.7 V–3.6 V supply range and an operating temperature span of −40 °C to 85 °C will find this device aligned with applications needing robust storage density and straightforward parallel bus connectivity.
Request a quote or submit an inquiry to receive pricing, availability, and additional technical support for the MT29F256G08AUCABH3-10IT:A.