MT29F256G08AUCABH3-10Z:A
| Part Description |
IC FLASH 256GBIT PAR 100LBGA |
|---|---|
| Quantity | 172 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABH3-10Z:A – IC FLASH 256GBIT PAR 100LBGA
The MT29F256G08AUCABH3-10Z:A is a 256 Gbit non-volatile parallel NAND flash memory device using SLC FLASH technology. It provides high-density parallel storage in a compact 100-LBGA package for designs that require large-capacity, board-mounted flash memory.
Designed for applications that need parallel interface flash with defined electrical and thermal characteristics, the device offers a 32G × 8 memory organization and operates within a standard commercial temperature range.
Key Features
- Memory Technology Single-Level Cell (SLC) NAND flash providing non-volatile storage.
- Density & Organization 256 Gbit capacity with a 32G × 8 memory organization for high-density code and data storage.
- Interface & Performance Parallel memory interface with a clock frequency rating of 100 MHz for synchronous parallel operation.
- Power Operating supply voltage range of 2.7 V to 3.6 V to match typical 3.3 V system rails.
- Package 100-LBGA package (12 × 18 mm) for compact board-level integration.
- Operating Temperature Specified for 0°C to 70°C (TA) suitable for commercial-temperature applications.
Typical Applications
- Non-volatile code storage — Suitable where large, board-mounted parallel flash is required for firmware or boot code.
- Embedded system storage — Suitable for embedded designs that need high-capacity parallel memory in a compact package.
- High-density data storage — Useful in systems that require substantial on-board non-volatile storage with a parallel interface.
Unique Advantages
- High storage capacity: 256 Gbit provides large on-board storage to reduce the need for external media.
- Parallel interface: 100 MHz clock support for predictable parallel access timing in system designs.
- Wide voltage compatibility: 2.7 V–3.6 V supply range aligns with common 3.3 V system rails for straightforward integration.
- Compact BGA footprint: 100-LBGA (12 × 18 mm) package enables high-density board implementation.
- Commercial temperature rating: Operates from 0°C to 70°C for standard commercial applications.
Why Choose IC FLASH 256GBIT PAR 100LBGA?
The MT29F256G08AUCABH3-10Z:A balances high-density SLC NAND storage, a parallel interface, and a compact 100-LBGA package to meet the needs of designs requiring large on-board non-volatile memory. Its electrical and thermal specifications make it suitable for commercial embedded applications where a parallel flash interface and defined operating conditions are required.
This device is appropriate for engineers and procurement teams targeting scalable, board-mounted flash solutions that integrate into existing 3.3 V system architectures and compact PCB layouts.
Request a quote or submit an inquiry to our sales team to obtain pricing, availability, and lead-time information for the MT29F256G08AUCABH3-10Z:A.
