MT29F256G08AUCABJ3-10Z:A TR
| Part Description |
IC FLASH 256GBIT PAR 132LBGA |
|---|---|
| Quantity | 1,444 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABJ3-10Z:A TR – IC FLASH 256GBIT PAR 132LBGA
The MT29F256G08AUCABJ3-10Z:A TR is a 256 Gbit non-volatile NAND flash device based on single-level cell (SLC) technology with a parallel memory interface. It implements ONFI 2.2-compliant asynchronous and synchronous NAND architectures and is supplied in a 132-LBGA (12×18) package.
Designed for systems that require high endurance and reliable NAND storage, this device provides a combination of dense storage, synchronous/asynchronous I/O modes, and a robust command set for embedded and storage applications requiring long-term data retention and repeatable program/erase cycles.
Key Features
- Memory Type & Capacity 256 Gbit NAND flash organized as 32G × 8; single-level cell (SLC) technology for established endurance characteristics.
- ONFI-Compliant Interface Open NAND Flash Interface (ONFI) 2.2-compliant with both asynchronous and synchronous I/O support, including DQS data strobe signals for synchronous data synchronization.
- Performance Synchronous timing up to mode 5 with read/write throughput per pin up to 200 MT/s; asynchronous read/write throughput up to 50 MT/s. Clock rate reference noted as 10 ns (DDR).
- Memory Organization Page size (×8): 8640 bytes (8192 + 448); block size: 128 pages (1024K + 56K bytes); 2 planes × 2048 blocks per plane; 256Gb device contains 32,768 blocks.
- Advanced Command Set Supports ONFI NAND Flash Protocol commands and advanced features including program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback (within the same plane).
- Operation & Status Operation status byte provides software detection of operation completion, pass/fail condition and write-protect status. RESET (FFh) is required as the first command after power-on.
- Array Performance Read page: 35 μs (max); program page: 350 μs (typ); erase block: 1.5 ms (typ).
- Endurance & Retention Endurance rated at 60,000 program/erase cycles and data retention compliant with JESD47G (see vendor documentation for qualification details).
- Electrical & Environmental Supply voltage: VCC 2.7–3.6 V (VCCQ supported at 1.7–1.95 V and 2.7–3.6 V per device documentation). Operating temperature (commercial): 0 °C to +70 °C (TA).
- Package Supplied in a 132-ball BGA (132-LBGA, 12×18) package and available in multiple package options across the device family.
Typical Applications
- Embedded Storage Systems High-density non-volatile storage for embedded controllers where endurance and page/block management are required.
- Industrial Data Logging Applications that benefit from SLC endurance and JESD47G-compliant data retention within the commercial temperature range.
- Code and Firmware Storage Reliable storage of firmware and critical code images using the device’s OTP mode and copyback capabilities.
Unique Advantages
- SLC Endurance: 60,000 program/erase cycles provide extended lifecycle for write-intensive applications.
- Flexible I/O Modes: Support for both asynchronous and synchronous ONFI 2.2 modes enables designers to select the timing and throughput profile that matches system requirements.
- High Density in Compact Package: 256 Gbit capacity delivered in a 132-LBGA (12×18) package for space-constrained board designs.
- Comprehensive Command Set: Built-in program/read caches, multi-plane and multi-LUN operations, OTP, and copyback simplify advanced flash management and improve system-level throughput.
- Verified Array Performance: Published read, program and erase timing figures allow predictable integration and performance planning.
Why Choose IC FLASH 256GBIT PAR 132LBGA?
The MT29F256G08AUCABJ3-10Z:A TR delivers a high-density SLC NAND solution with ONFI 2.2-compliant synchronous and asynchronous interfaces, predictable array performance and documented endurance and retention characteristics. It is suited to designs that require robust non-volatile storage with advanced flash command capabilities and clear electrical and timing specifications.
This device is a practical choice for engineers building embedded storage, firmware/code storage, and data-logging systems who need a combination of capacity, endurance and standard-compliant interfaces, backed by detailed vendor documentation for integration and validation.
If you need pricing, lead-time, or a formal quote for MT29F256G08AUCABJ3-10Z:A TR, request a quote or submit an inquiry to get detailed availability and ordering information.
