MT29F256G08AUCABK4-10:A

IC FLASH 256GBIT PARALLEL 100MHZ
Part Description

IC FLASH 256GBIT PARALLEL 100MHZ

Quantity 1,039 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency100 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08AUCABK4-10:A – IC FLASH 256GBIT PARALLEL 100MHZ

The MT29F256G08AUCABK4-10:A is a 256 Gbit non-volatile NAND flash memory device using SLC Flash technology with a parallel memory interface. It is organized as 32G × 8 and supports operation with a 100 MHz clock frequency.

This device is intended for systems requiring parallel flash storage with a wide supply voltage range and defined operating temperature range. Key value propositions include large capacity, SLC flash technology, and compatibility with 2.7 V to 3.6 V supply domains.

Key Features

  • Memory Core Single-Level Cell (SLC) NAND flash technology providing non-volatile storage.
  • Memory Capacity & Organization 256 Gbit total capacity organized as 32G × 8 for straightforward byte-oriented access and integration.
  • Interface & Performance Parallel memory interface with a clock frequency rating of 100 MHz to match parallel system timing requirements.
  • Power Operates from a 2.7 V to 3.6 V supply range to support common system power rails.
  • Temperature Range Rated for operation from 0°C to 70°C (TA), suitable for standard commercial temperature environments.

Typical Applications

  • Embedded Storage Use as onboard non-volatile memory in systems that require 256 Gbit of parallel flash storage.
  • Firmware and Code Storage Suitable for storing firmware, boot code, or system images where SLC NAND non-volatile memory is required.
  • Data Retention in Parallel Systems Integration into designs that rely on a parallel memory interface and need stable operation within the specified supply and temperature ranges.

Unique Advantages

  • Large 256 Gbit Capacity: Provides significant non-volatile storage in a single device, reducing the need for multiple memory components.
  • SLC NAND Technology: Uses single-level cell architecture for the flash core as specified, aligning with designs that require SLC characteristics.
  • Parallel 100 MHz Interface: A parallel interface rated at 100 MHz supports integration with systems designed for parallel memory buses.
  • Flexible Supply Range: 2.7 V to 3.6 V operation allows use with common 3 V system power rails.
  • Commercial Temperature Rating: Specified 0°C to 70°C operating range for standard commercial applications.

Why Choose IC FLASH 256GBIT PARALLEL 100MHZ?

The MT29F256G08AUCABK4-10:A is positioned as a high-capacity, parallel-interface SLC NAND flash device for designs that require substantial non-volatile storage with a defined 100 MHz clock interface and standard commercial temperature operation. Its 32G × 8 organization and 2.7 V–3.6 V supply compatibility make it suitable for systems that need byte-oriented parallel flash integration.

This device is well suited to engineers and procurement teams specifying parallel NAND flash where capacity, SLC technology, and clear electrical and thermal limits are primary selection criteria. It offers a straightforward option for scaling storage capacity while maintaining compatibility with 3 V-class systems.

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