MT29F256G08AUEDBJ6-12:D TR
| Part Description |
IC FLASH 256GBIT PAR 132LBGA |
|---|---|
| Quantity | 1,031 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUEDBJ6-12:D TR – IC FLASH 256GBIT PAR 132LBGA
The MT29F256G08AUEDBJ6-12:D TR is a 256 Gbit non-volatile FLASH memory device based on NAND (SLC) technology. It is organized as 32G × 8 and exposes a parallel memory interface with an 83 MHz clock, supplied in a 132-LBGA (12×18) package.
This device is intended for systems requiring high-density parallel FLASH storage within a 132-LBGA footprint, operating from 2.5 V to 3.6 V and rated for an ambient temperature range of 0°C to 70°C. It is manufactured by Micron Technology Inc.
Key Features
- Memory Type & Technology Non-volatile NAND FLASH using SLC technology, providing byte-addressable FLASH storage.
- Density & Organization 256 Gbit total capacity organized as 32G × 8 for straightforward memory mapping and addressing.
- Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz for synchronous access timing.
- Voltage Range Operates from 2.5 V to 3.6 V, enabling use in systems with common FLASH supply rails.
- Package & Mounting Supplied in a 132-LBGA package (12×18 mm), suitable for PCB mounting where a compact BGA footprint is required.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA) for standard commercial-temperature applications.
Unique Advantages
- High storage density: 256 Gbit capacity supports large data or code storage requirements in a single device.
- Parallel interface with defined clock: 83 MHz clock support enables deterministic timing for parallel memory access schemes.
- Single-package solution: 132-LBGA (12×18) package consolidates high capacity into a compact form factor, reducing board space.
- Flexible supply voltage: 2.5 V–3.6 V operation accommodates a range of system power architectures.
- Simple memory organization: 32G × 8 layout simplifies addressing and system integration for parallel FLASH controllers.
Why Choose IC FLASH 256GBIT PAR 132LBGA?
The MT29F256G08AUEDBJ6-12:D TR positions itself as a high-density, parallel-access SLC NAND FLASH option for designs that require large non-volatile storage within a compact 132-LBGA footprint. Its 32G × 8 organization and 83 MHz clock make it suitable for systems that implement parallel FLASH interfaces and require a clear timing reference.
Designed and manufactured by Micron Technology Inc., this device is appropriate for engineers specifying a 256 Gbit parallel FLASH component operating from 2.5 V to 3.6 V and within a 0°C to 70°C ambient range, offering a straightforward path to integrate large-capacity non-volatile memory into commercial-temperature applications.
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