MT29F256G08CBCBBJ4-37:B

IC FLASH 256GBIT PAR 132VBGA
Part Description

IC FLASH 256GBIT PAR 132VBGA

Quantity 731 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package132-VBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency267 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging132-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level1 (Unlimited)RoHS ComplianceUnknownREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CBCBBJ4-37:B – IC FLASH 256GBIT PAR 132VBGA

The MT29F256G08CBCBBJ4-37:B is a 256 Gbit parallel NAND flash memory device manufactured by Micron Technology Inc. It implements multi-level cell (MLC) NAND flash architecture with a 32G × 8 memory organization, providing high-density non-volatile storage in a compact package.

This device is suited for designs that require parallel NAND flash memory with a defined clock rate and standard operating voltage range, and is supplied in a 132-VBGA (12×18) package with an ambient operating temperature range of 0°C to 70°C.

Key Features

  • Memory Core & Organization 32G × 8 organization delivering 256 Gbit of non-volatile storage capacity.
  • Technology NAND flash using multi-level cell (MLC) technology for density-optimized storage.
  • Interface & Clock Parallel memory interface with a specified clock frequency of 267 MHz for synchronous operation.
  • Voltage Supply Operates from 2.7 V to 3.6 V, supporting standard 3.3 V memory system rails.
  • Package 132-VBGA supplier device package, dimensioned as 12×18 mm, for compact board-level integration.
  • Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
  • Memory Format FLASH; non-volatile storage suitable for persistent data retention.

Typical Applications

  • Embedded Storage Used where high-density parallel NAND flash is required for persistent data storage in embedded systems.
  • High-Capacity Memory Modules Suitable for designs that consolidate multiple gigabits of flash into a single device footprint to simplify board layout.
  • Consumer Electronics Fits applications that need large non-volatile storage in a compact VBGA package and standard operating conditions.

Unique Advantages

  • Large Non-Volatile Capacity: 256 Gbit density enables consolidation of storage needs into a single device, reducing board complexity.
  • MLC NAND Technology: Multi-level cell architecture increases storage density while maintaining a standard flash format.
  • Parallel Interface with Defined Clock: Parallel data interface and 267 MHz clock specification provide predictable timing for system integration.
  • Standard Voltage Range: 2.7 V to 3.6 V supply compatibility aligns with common system power rails for straightforward power design.
  • Compact VBGA Package: 132-VBGA (12×18) package enables high-density placement and board-space savings.

Why Choose IC FLASH 256GBIT PAR 132VBGA?

The MT29F256G08CBCBBJ4-37:B positions itself as a high-density parallel NAND flash device that combines 256 Gbit capacity, MLC technology, and a compact 132-VBGA package. Its specified clock frequency and voltage range make it a well-defined building block for systems that require predictable memory timing and standard power integration.

This device is suitable for engineers and procurement teams specifying non-volatile, high-capacity flash for embedded storage, memory module consolidation, and compact consumer electronics designs where ambient temperatures are within the 0°C to 70°C range.

Request a quote or contact sales for pricing and availability of MT29F256G08CBCBBJ4-37:B.

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