MT29F256G08CBCBBWP-10:B

The MT29F256G08CBCBBWP-10:B is a 256 Gbit non-volatile NAND flash memory in a parallel interface format. It uses MLC NAND technology with a memory organization of 32G x 8, providing high-density storage in a 48-TSOP I package.

This device is intended for system designs that require parallel NAND flash storage with a single-supply voltage range of 2.7 V to 3.6 V and an operating temperature range of 0°C to 70°C. The device specification lists a clock frequency of 100 MHz for interface timing considerations.

Key Features

• Memory 256 Gbit capacity organized as 32G x 8, offering large non-volatile storage in a single device.
• Technology FLASH - NAND (MLC) technology provides multi-level cell storage in NAND architecture.
• Interface Parallel memory interface suitable for systems designed to use parallel NAND flash.
• Performance Specified clock frequency of 100 MHz for timing and interface design.
• Power Single-supply operation across 2.7 V to 3.6 V to match common system voltage rails.
• Package 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width) for board-level mounting and footprint planning.
• Operating Conditions Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Parallel NAND storage Used as on-board parallel NAND flash memory where 256 Gbit non-volatile capacity is required.
• High-density board-level memory Deployed in designs that need large MLC NAND storage in a compact 48-TSOP I package.
• System firmware and data retention Suitable for storing firmware images or large data sets that require non-volatile retention within the specified temperature and voltage ranges.

Unique Advantages

• Large single-device capacity: 256 Gbit density reduces the number of parts needed for high-capacity designs.
• MLC NAND technology: Multi-level cell architecture enables higher bit density per memory cell compared to single-level cell alternatives.
• Parallel interface: Parallel memory interface simplifies integration into systems designed for parallel NAND connectivity.
• Wide supply range: 2.7 V to 3.6 V operation supports common 3 V system rails.
• Compact package: 48-TSOP I (0.724", 18.40 mm) footprint facilitates board-level placement in space-constrained designs.
• Defined operating range: Specified ambient temperature range of 0°C to 70°C for predictable thermal design.

Why Choose IC FLASH 256GBIT PAR 48TSOP I?

The MT29F256G08CBCBBWP-10:B delivers a 256 Gbit MLC NAND solution in a 48-TSOP I package with a parallel interface, making it suitable for designs that require large, board-mounted non-volatile storage within a 2.7 V to 3.6 V power domain and 0°C to 70°C ambient range. Its 32G x 8 organization and 100 MHz clock specification provide the concrete parameters engineers need for system integration.

Choose this device when your design priorities include high single-device storage density, standard parallel interfacing, and a compact TSOP footprint for board-level implementation.

Request a quote or contact sales for pricing, lead time, and availability for the MT29F256G08CBCBBWP-10:B IC FLASH 256GBIT PAR 48TSOP I.